Issued Patents All Time
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11764071 | Apparatus for stressing semiconductor substrates | Robert J. Falster, John A. Pitney, Peter Albrecht | 2023-09-19 |
| 11282715 | Apparatus for stressing semiconductor substrates | Robert J. Falster, John A. Pitney, Peter Albrecht | 2022-03-22 |
| 11276582 | Apparatus for stressing semiconductor substrates | Robert J. Falster, John A. Pitney, Peter Albrecht | 2022-03-15 |
| 11276583 | Apparatus for stressing semiconductor substrates | Robert J. Falster, John A. Pitney, Peter Albrecht | 2022-03-15 |
| 10361097 | Apparatus for stressing semiconductor substrates | Robert J. Falster, John A. Pitney, Peter Albrecht | 2019-07-23 |
| 9634098 | Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski method | Robert J. Falster | 2017-04-25 |
| 9583364 | Processes and apparatus for preparing heterostructures with reduced strain by radial compression | Robert J. Falster, John A. Pitney, Peter Albrecht | 2017-02-28 |
| 9583363 | Processes and apparatus for preparing heterostructures with reduced strain by radial distension | Robert J. Falster, John A. Pitney, Peter Albrecht | 2017-02-28 |
| 9142616 | Silicon wafers with suppressed minority carrier lifetime degradation | Robert J. Falster | 2015-09-22 |
| 9129919 | Production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei | Robert J. Falster, Marco Cornara, Daniela Gambaro, Massimiliano Olmo | 2015-09-08 |
| 8969119 | Processes for suppressing minority carrier lifetime degradation in silicon wafers | Robert J. Falster | 2015-03-03 |
| 8026145 | Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering | Robert J. Falster, Gabriella Borionetti | 2011-09-27 |
| 7521382 | High resistivity silicon structure and a process for the preparation thereof | Robert J. Falster, Galina I. Voronkova, Anna V. Batunina | 2009-04-21 |
| 7485928 | Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering | Robert J. Falster, Gabriella Borionetti | 2009-02-03 |
| 7431765 | Process for preparing single crystal silicon having improved gate oxide integrity | Robert J. Falster, Paolo Mutti, Francesco Bonoli | 2008-10-07 |
| 7105050 | Method for the production of low defect density silicon | Robert J. Falster, Mohsen Banan | 2006-09-12 |
| 6986925 | Single crystal silicon having improved gate oxide integrity | Robert J. Falster, Paolo Mutti, Francesco Bonoli | 2006-01-17 |
| 6955718 | Process for preparing a stabilized ideal oxygen precipitating silicon wafer | Robert J. Falster | 2005-10-18 |
| 6803576 | Analytical method to measure nitrogen concentration in single crystal silicon | Maria Giovanna Pretto, Maria Porrini, Roberto Scala, Paolo Collareta, Robert J. Falster | 2004-10-12 |
| 6689209 | Process for preparing low defect density silicon using high growth rates | Robert J. Falster | 2004-02-10 |
| 6652646 | Process for growing a silicon crystal segment substantially free from agglomerated intrinsic point defects which allows for variability in the process conditions | Robert J. Falster, Paolo Mutti | 2003-11-25 |
| 6500255 | Process for growing silicon crystals which allows for variability in the process conditions while suppressing the formation of agglomerated intrinsic point defects | Robert J. Falster, Paolo Mutti | 2002-12-31 |
| 6312516 | Process for preparing defect free silicon crystals which allows for variability in process conditions | Robert J. Falster, Paolo Mutti | 2001-11-06 |