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Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
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Process for making silicon wafers with stabilized oxygen precipitate nucleation centers |
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Nitrogen-doped silicon substantially free of oxidation induced stacking faults |
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Single crystal silicon ingot having a high arsenic concentration |
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Method for the production of low defect density silicon |
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Seed crystals for pulling single crystal silicon |
Hariprasad Sreedharamurthy |
2005-03-15 |
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Method for the production of low defect density silicon |
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Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
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Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the same |
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Crystal puller and method for growing monocrystalline silicon ingots |
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Heat shield assembly for crystal puller |
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Crystal puller for growing monocrystalline silicon ingots |
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Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method |
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Method and system for controlling growth of a silicon crystal |
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1998-05-19 |
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Rapid cooling of CZ silicon crystal growth system |
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Cleaning of polycrystalline silicon for charging into a Czochralski growing process |
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