Issued Patents All Time
Showing 101–125 of 320 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8634235 | Phase change memory coding | Ming-Hsiu Lee, Yen-Hao Shih, Tien-Yen Wang, Chao-I Wu | 2014-01-21 |
| 8624299 | Stacked bit line dual word line nonvolatile memory | — | 2014-01-07 |
| 8624236 | Phase change memory cell having vertical channel access transistor | Chung H. Lam | 2014-01-07 |
| 8610098 | Phase change memory bridge cell with diode isolation device | — | 2013-12-17 |
| 8605495 | Isolation device free memory | — | 2013-12-10 |
| 8586960 | Integrated circuit including vertical diode | Thomas Happ, Bipin Rajendran, Min Yang | 2013-11-19 |
| 8525290 | Method of forming memory cell access device | Erh-Kun Lai, Edward W. Kiewra | 2013-09-03 |
| 8513637 | 4F2 self align fin bottom electrodes FET drive phase change memory | — | 2013-08-20 |
| 8497705 | Phase change device for interconnection of programmable logic device | — | 2013-07-30 |
| 8497182 | Sidewall thin film electrode with self-aligned top electrode and programmable resistance memory | — | 2013-07-30 |
| 8476157 | Buried bit line anti-fuse one-time-programmable nonvolatile memory | — | 2013-07-02 |
| 8471236 | Flat lower bottom electrode for phase change memory cell | Matthew J. Breitwisch, Eric A. Joseph, Chung H. Lam, Alejandro G. Schrott | 2013-06-25 |
| 8445313 | Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process | Matthew J. Breitwisch, Chieh-Fang Chen, Shih-Hung Chen, Eric A. Joseph, Chung H. Lam +3 more | 2013-05-21 |
| 8437192 | 3D two bit-per-cell NAND flash memory | Hang-Ting Lue, Yen-Hao Shih, Erh-Kun Lai, Ming-Hsiu Lee, Tien-Yen Wang | 2013-05-07 |
| 8426294 | 3D memory array arranged for FN tunneling program and erase | Yen-Hao Shih, Erh-Kun Lai, Ming-Hsiu Lee, Hang-Ting Lue | 2013-04-23 |
| 8426242 | Composite target sputtering for forming doped phase change materials | Huai-Yu Cheng, Chieh-Fang Chen, Yen-Hao Shih, Simone Raoux, Matthew J. Breitwisch | 2013-04-23 |
| 8415651 | Phase change memory cell having top and bottom sidewall contacts | — | 2013-04-09 |
| 8406033 | Memory device and method for sensing and fixing margin cells | Yen-Hao Shih | 2013-03-26 |
| 8395935 | Cross-point self-aligned reduced cell size phase change memory | Erh-Kun Lai | 2013-03-12 |
| 8363463 | Phase change memory having one or more non-constant doping profiles | Yen-Hao Shih, Huai-Yu Cheng, Chieh-Fang Chen, Chao-I Wu, Ming-Hsiu Lee +3 more | 2013-01-29 |
| 8350316 | Phase change memory cells having vertical channel access transistor and memory plane | Chung H. Lam, Ming-Hsiu Lee, Bipin Rajendran | 2013-01-08 |
| 8324605 | Dielectric mesh isolated phase change structure for phase change memory | Chieh-Fang Chen, Yen-Hao Shih, Ming-Hsiu Lee, Matthew J. Breitwisch, Chung H. Lam +3 more | 2012-12-04 |
| 8313979 | Phase change memory cell having vertical channel access transistor | Chung H. Lam | 2012-11-20 |
| 8315088 | Multiple phase change materials in an integrated circuit for system on a chip application | — | 2012-11-20 |
| 8310864 | Self-aligned bit line under word line memory array | Chung H. Lam, Erh-Kun Lai, Matthew J. Breitwisch | 2012-11-13 |