Issued Patents All Time
Showing 51–75 of 320 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10050196 | Dielectric doped, Sb-rich GST phase change memory | Huai-Yu Cheng | 2018-08-14 |
| 10043819 | Method for manufacturing 3D NAND memory using gate replacement, and resulting structures | Erh-Kun Lai | 2018-08-07 |
| 10026750 | Memory device and method for operating the same | Erh-Kun Lai | 2018-07-17 |
| 9972660 | 3D phase change memory with high endurance | Wanki Kim, Matthew J. BrightSky, Chung H. Lam | 2018-05-15 |
| 9917252 | GaSbGe phase change memory materials | Huai-Yu Cheng | 2018-03-13 |
| 9818760 | Memory structure, method of operating the same, and method of manufacturing the same | Erh-Kun Lai | 2017-11-14 |
| 9799663 | Stacked bit line dual word line nonvolatile memory | — | 2017-10-24 |
| 9793323 | Phase change memory with high endurance | Wanki Kim, Matthew J. BrightSky, Chung H. Lam | 2017-10-17 |
| 9779813 | Phase change memory array architecture achieving high write/read speed | Hsin-Yi Ho, Scott C. Lewis, Richard Jordan | 2017-10-03 |
| 9672906 | Phase change memory with inter-granular switching | Yung-Han Ho | 2017-06-06 |
| 9659998 | Memory having an interlayer insulating structure with different thermal resistance | — | 2017-05-23 |
| 9646692 | Programming verify for nonvolatile memory | Hsin-Yi Ho | 2017-05-09 |
| 9570117 | Integrated circuit with independent programmability | Tu-Shun Chen | 2017-02-14 |
| 9558818 | Memory and memory managing method | Hsin-Yi Ho, Ming-Hsiu Lee, Chun-Hsiung Hung, Tien-Yen Wang | 2017-01-31 |
| 9537093 | Memory structure | Erh-Kun Lai | 2017-01-03 |
| 9507663 | Memory device and operation method | Hsin-Yi Ho, Wei-Chih Chien, Tu-Shun Chen, Chia-Jung Chen | 2016-11-29 |
| 9472274 | Refresh of nonvolatile memory cells and reference cells with resistance drift | — | 2016-10-18 |
| 9466566 | Stacked bit line dual word line nonvolatile memory | — | 2016-10-11 |
| 9449720 | Dynamic redundancy repair | — | 2016-09-20 |
| 9336879 | Multiple phase change materials in an integrated circuit for system on a chip application | Chao-I Wu, Wei-Chih Chien | 2016-05-10 |
| 9336867 | Phase change memory coding | Ming-Hsiu Lee, Yen-Hao Shih, Tien-Yen Wang, Chao-I Wu | 2016-05-10 |
| 9236568 | Sidewall thin film electrode with self-aligned top electrode and programmable resistance memory | — | 2016-01-12 |
| 9214229 | Phase change memory material and system for embedded memory applications | Huai-Yu Cheng, Che-Min Lin | 2015-12-15 |
| 9166165 | Uniform critical dimension size pore for PCRAM application | Matthew J. Breitwisch, Roger W. Cheek, Chung H. Lam, Eric A. Joseph, Alejandro G. Schrott | 2015-10-20 |
| 9082954 | PCRAM with current flowing laterally relative to axis defined by electrodes | Chung H. Lam | 2015-07-14 |