HL

Hsiang-Lan Lung

MC Macronix International Co.: 310 patents #2 of 1,241Top 1%
IBM: 57 patents #1,416 of 70,183Top 3%
QA Qimonda Ag: 10 patents #32 of 575Top 6%
📍 Ardsley, NY: #1 of 90 inventorsTop 2%
🗺 New York: #51 of 115,490 inventorsTop 1%
Overall (All Time): #1,094 of 4,157,543Top 1%
320
Patents All Time

Issued Patents All Time

Showing 151–175 of 320 patents

Patent #TitleCo-InventorsDate
8064248 2T2R-1T1R mix mode phase change memory array 2011-11-22
8063428 Two-bits per cell not-and-gate (NAND) nitride trap memory 2011-11-22
8062923 Thin film fuse phase change cell with thermal isolation pad and manufacturing method 2011-11-22
8059449 Phase change device having two or more substantial amorphous regions in high resistance state Yen-Hao Shih, Chieh-Fang Chen 2011-11-15
8030635 Polysilicon plug bipolar transistor for phase change memory Erh-Kun Lai, Bipin Rajendran, Chung H. Lam 2011-10-04
8030634 Memory array with diode driver and method for fabricating the same Min Yang, Thomas Happ, Bipin Rajendran 2011-10-04
8026505 Memory device 2011-09-27
8008643 Phase change memory cell with heater and method for fabricating the same 2011-08-30
8008114 Phase change memory device and manufacturing method Shih-Hung Chen 2011-08-30
7993962 I-shaped phase change memory cell Shih-Hung Chen 2011-08-09
7985989 Stacked bit line dual word line nonvolatile memory 2011-07-26
7978509 Phase change memory with dual word lines and source lines and method of operating same Chung H. Lam 2011-07-12
7972895 Memory cell device with coplanar electrode surface and method 2011-07-05
7968861 Phase change memory element Geoffrey Burr, Yi-Chou Chen 2011-06-28
7968876 Phase change memory cell having vertical channel access transistor Chung H. Lam 2011-06-28
7964863 Memory cell having a side electrode contact 2011-06-21
7964437 Memory device having wide area phase change element and small electrode contact area 2011-06-21
7964468 Multi-level memory cell having phase change element and asymmetrical thermal boundary Yi-Chou Chen 2011-06-21
7955958 Method for fabrication of polycrystalline diodes for resistive memories Bipin Rajendran, Thomas Happ, Min Yang 2011-06-07
7956344 Memory cell with memory element contacting ring-shaped upper end of bottom electrode 2011-06-07
7935564 Self-converging bottom electrode ring Matthew J. Breitwisch, Chung H. Lam 2011-05-03
7932129 Vertical side wall active pin structures in a phase change memory and manufacturing methods 2011-04-26
7932507 Current constricting phase change memory element structure Chieh-Fang Chen, Shih-Hung Chen, Yi-Chou Chen, Thomas Happ, Chia-Hua Ho +4 more 2011-04-26
7932506 Fully self-aligned pore-type memory cell having diode access device Chung H. Lam 2011-04-26
7933139 One-transistor, one-resistor, one-capacitor phase change memory 2011-04-26