Issued Patents All Time
Showing 26–50 of 77 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6413881 | PROCESS FOR FORMING THIN GATE OXIDE WITH ENHANCED RELIABILITY BY NITRIDATION OF UPPER SURFACE OF GATE OF OXIDE TO FORM BARRIER OF NITROGEN ATOMS IN UPPER SURFACE REGION OF GATE OXIDE, AND RESULTING PRODUCT | John Haywood, James Kimball, Helmut Puchner, Ravindra M. Kapre, Nicholas K. Eib | 2002-07-02 |
| 6331468 | Formation of integrated circuit structure using one or more silicon layers for implantation and out-diffusion in formation of defect-free source/drain regions and also for subsequent formation of silicon nitride spacers | Helmut Puchner, Ravindra Kapre, James Kimball | 2001-12-18 |
| 6303047 | Low dielectric constant multiple carbon-containing silicon oxide dielectric material for use in integrated circuit structures, and method of making same | Valeriy Sukharev, Vladimir Zubkov | 2001-10-16 |
| 6246093 | Hybrid surface/buried-channel MOSFET | Lindor E. Henrickson | 2001-06-12 |
| 6180470 | FETs having lightly doped drain regions that are shaped with counter and noncounter dorant elements | Laique Khan, James Kimball | 2001-01-30 |
| 6156620 | Isolation trench in semiconductor substrate with nitrogen-containing barrier region, and process for forming same | Helmut Puchner, Shih-Fen Huang | 2000-12-05 |
| 6117749 | Modification of interfacial fields between dielectrics and semiconductors | Kranti V. Anand | 2000-09-12 |
| 6093936 | Integrated circuit with isolation of field oxidation by noble gas implantation | Abraham Yee, Yu-Lam Ho | 2000-07-25 |
| 6090651 | Depletion free polysilicon gate electrodes | Helmut Puchner, Gary K. Giust | 2000-07-18 |
| 6087229 | Composite semiconductor gate dielectrics | David Chan, James Kimball, David Lee, John Haywood, Valeriy Sukharev | 2000-07-11 |
| 6060375 | Process for forming re-entrant geometry for gate electrode of integrated circuit structure | Jon S. Owyang, James Kimball | 2000-05-09 |
| 6033998 | Method of forming variable thickness gate dielectrics | David Chan, James Kimball, David Lee, John Haywood, Valeriy Sukharev | 2000-03-07 |
| 5963801 | Method of forming retrograde well structures and punch-through barriers using low energy implants | Laique Khan, James Kimball | 1999-10-05 |
| 5936285 | Gate array layout to accommodate multi-angle ion implantation | Nicholas F. Pasch, Aldona M. Butkus | 1999-08-10 |
| 5904551 | Process for low energy implantation of semiconductor substrate using channeling to form retrograde wells | James Kimball | 1999-05-18 |
| 5897381 | Method of forming a layer and semiconductor substrate | Nicholas K. Eib, Jon S. Owyang | 1999-04-27 |
| 5893952 | Apparatus for rapid thermal processing of a wafer | Nicholas K. Eib, Jon S. Owyang | 1999-04-13 |
| 5877530 | Formation of gradient doped profile region between channel region and heavily doped source/drain contact region of MOS device in integrated circuit structure using a re-entrant gate electrode and a higher dose drain implantation | Laique Khan, Philippe Schoenborn | 1999-03-02 |
| 5858864 | Process for making group IV semiconductor substrate treated with one or more group IV elements to form barrier region capable of inhibiting migration of dopant materials in substrate | James Kimball | 1999-01-12 |
| 5837598 | Diffusion barrier for polysilicon gate electrode of MOS device in integrated circuit structure, and method of making same | Valeriy Sukharev, Jon S. Owyang, John Haywood | 1998-11-17 |
| 5756369 | Rapid thermal processing using a narrowband infrared source and feedback | Nicholas K. Eib, Jon S. Owyang | 1998-05-26 |
| 5739580 | Oxide formed in semiconductor substrate by implantation of substrate with a noble gas prior to oxidation | James Kimball | 1998-04-14 |
| 5723896 | Integrated circuit structure with vertical isolation from single crystal substrate comprising isolation layer formed by implantation and annealing of noble gas atoms in substrate | Abraham Yee | 1998-03-03 |
| 5717238 | Substrate with controlled amount of noble gas ions to reduce channeling and/or diffusion of a boron dopant forming P-LDD region of a PMOS device | James Kimball, Yu-Lam Ho, Gobi R. Padmanabhan, Douglas T. Grider, Chi-Yi Kao | 1998-02-10 |
| 5707888 | Oxide formed in semiconductor substrate by implantation of substrate with a noble gas prior to oxidation | James Kimball | 1998-01-13 |