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Atomic layer deposition of hafnium-based high-k dielectric |
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| 6060375 |
Process for forming re-entrant geometry for gate electrode of integrated circuit structure |
Sheldon Aronowitz, James Kimball |
2000-05-09 |
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Method of forming a layer and semiconductor substrate |
Sheldon Aronowitz, Nicholas K. Eib |
1999-04-27 |
| 5893952 |
Apparatus for rapid thermal processing of a wafer |
Sheldon Aronowitz, Nicholas K. Eib |
1999-04-13 |
| 5837598 |
Diffusion barrier for polysilicon gate electrode of MOS device in integrated circuit structure, and method of making same |
Sheldon Aronowitz, Valeriy Sukharev, John Haywood |
1998-11-17 |
| 5818100 |
Product resulting from selective deposition of polysilicon over single crystal silicon substrate |
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1998-10-06 |
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Rapid thermal processing using a narrowband infrared source and feedback |
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| 5646073 |
Process for selective deposition of polysilicon over single crystal silicon substrate and resulting product |
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