Issued Patents All Time
Showing 1–25 of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5637894 | Solid state image sensor device with single-layered transfer electrodes | Masako Hori, Masaaki Ogawa, Hidenori Shibata, Yoshiyuki Shioyama | 1997-06-10 |
| 5229323 | Method for manufacturing a semiconductor device with Schottky electrodes | Kizashi Shimada, Tatsuo Akiyama | 1993-07-20 |
| 5126817 | Dielectrically isolated structure for use in soi-type semiconductor device | Yoshiro Baba, Akihiko Osawa, Kenji Yamawaki | 1992-06-30 |
| 5086332 | Planar semiconductor device having high breakdown voltage | Akio Nakagawa, Kiminori Watanabe, Yoshihiro Yamaguchi, Yoshiro Baba | 1992-02-04 |
| 5084408 | Method of making complete dielectric isolation structure in semiconductor integrated circuit | Yoshiro Baba, Akihiko Osawa, Satoshi Yanagiya | 1992-01-28 |
| 5049954 | GaAs field effect semiconductor device having Schottky gate structure | Kizashi Shimada, Tatsuo Akiyama | 1991-09-17 |
| 5031021 | Semiconductor device with a high breakdown voltage | Yoshiro Baba, Kazuo Tsuru, Tatsuo Akiyama | 1991-07-09 |
| 5029324 | Semiconductor device having a semiconductive protection layer | Akihiko Osawa, Yoshiro Baba | 1991-07-02 |
| 4984052 | Bonded substrate of semiconductor elements having a high withstand voltage | Yoshiro Baba, Akihiko Osawa, Satoshi Yanagiya | 1991-01-08 |
| 4968932 | Evaluation method for semiconductor device | Yoshiro Baba, Seiji Yasuda | 1990-11-06 |
| 4780426 | Method for manufacturing high-breakdown voltage semiconductor device | Yoshiro Baba, Jiro Ohshima | 1988-10-25 |
| 4729966 | Process for manufacturing a Schottky FET device using metal sidewalls as gates | Tatsuo Akiyama, Shunichi Hiraki | 1988-03-08 |
| 4710794 | Composite semiconductor device | Tatsuo Akiyama, Yoshiro Baba | 1987-12-01 |
| 4700455 | Method of fabricating Schottky gate-type GaAs field effect transistor | Kizashi Shimada, Tatsuo Akiyama | 1987-10-20 |
| 4585489 | Method of controlling lifetime of minority carriers by electron beam irradiation through semi-insulating layer | Shun-ichi Hiraki, Kazuo Tsuru, Yoshikazu Usuki | 1986-04-29 |
| 4566174 | Semiconductor device and method for manufacturing the same | Seiji Yasuda, Toshio Yonezawa | 1986-01-28 |
| 4560642 | Method of manufacturing a semiconductor device | Toshio Yonezawa, Takashi Ajima, Shunichi Hiraki, Yoshitami Oka | 1985-12-24 |
| 4542400 | Semiconductor device with multi-layered structure | Shunichi Hiraki, Kuniaki Kumamaru, Toshio Yonezawa | 1985-09-17 |
| 4532004 | Method of manufacturing a semiconductor device | Tatsuo Akiyama, Shunichi Hiraki | 1985-07-30 |
| 4515642 | Method of forming deep aluminum doped silicon by implanting Al and Si ions through alumina layer and device formed thereby | Takashi Ajima, Jiro Ohshima | 1985-05-07 |
| 4502207 | Wiring material for semiconductor device and method for forming wiring pattern therewith | Jiro Ohshima, Masahiro Abe | 1985-03-05 |
| 4479830 | Method of manufacturing a semiconductor device using epitaxially regrown protrusion as an alignment marker | Jiro Ohshima, Takashi Ajima, Toshio Yonezawa | 1984-10-30 |
| 4426234 | Method of forming reproducible impurity zone of gallium or aluminum in a wafer by implanting through composite layers and diffusion annealing | Jiro Ohshima, Takashi Ajima, Toshio Yonezawa | 1984-01-17 |
| 4415372 | Method of making transistors by ion implantations, electron beam irradiation and thermal annealing | Toshio Yonezawa, Takashi Ajima, Jiro Ohshima | 1983-11-15 |
| 4404736 | Method for manufacturing a semiconductor device of mesa type | Takashi Ajima, Jiro Ohshima, Masahiro Abe | 1983-09-20 |