Issued Patents All Time
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5554872 | Semiconductor device and method of increasing device breakdown voltage of semiconductor device | Yoshiro Baba, Akihiko Osawa | 1996-09-10 |
| 5321289 | Vertical MOSFET having trench covered with multilayer gate film | Yoshiro Baba, Satoshi Yanagiya, Noburo Matsuda | 1994-06-14 |
| 5282018 | Power semiconductor device having gate structure in trench | Yoshiro Baba | 1994-01-25 |
| 5242845 | Method of production of vertical MOS transistor | Yoshiro Baba, Akihiko Osawa, Satoshi Yanagiya | 1993-09-07 |
| 5126807 | Vertical MOS transistor and its production method | Yoshiro Baba, Akihiko Osawa, Satoshi Yanagiya | 1992-06-30 |
| 4729966 | Process for manufacturing a Schottky FET device using metal sidewalls as gates | Yutaka Koshino, Tatsuo Akiyama | 1988-03-08 |
| 4647472 | Process of producing a semiconductor device | Yoshikazu Usuki, Kazuhiro Takimoto | 1987-03-03 |
| 4589004 | Semiconductor device monolithically comprising a V-MOSFET and bipolar transistor isolated from each other | Seiji Yasuda, Toshio Yonezawa, Masafumi Miyagawa | 1986-05-13 |
| 4560642 | Method of manufacturing a semiconductor device | Toshio Yonezawa, Takashi Ajima, Yutaka Koshino, Yoshitami Oka | 1985-12-24 |
| 4542400 | Semiconductor device with multi-layered structure | Kuniaki Kumamaru, Yutaka Koshino, Toshio Yonezawa | 1985-09-17 |
| 4532004 | Method of manufacturing a semiconductor device | Tatsuo Akiyama, Yutaka Koshino | 1985-07-30 |
| 4521256 | Method of making integrated devices having long and short minority carrier lifetimes | Hiroshi Kinoshita, Kuniaki Kumamaru, Shigeo Koguchi, Toshio Yonezawa | 1985-06-04 |
| 4507673 | Semiconductor memory device | Masaharu Aoyama, Toshio Yonezawa | 1985-03-26 |
| 4485393 | Semiconductor device with selective nitride layer over channel stop | Kuniaki Kumamaru, Toshio Yonezawa | 1984-11-27 |
| 4451303 | Diffusion of aluminum | Kiyoshi Kikuchi, Shigeo Yawata, Masafumi Miyagawa | 1984-05-29 |
| 4379726 | Method of manufacturing semiconductor device utilizing outdiffusion and epitaxial deposition | Kuniaki Kumamaru, Toshio Yonezawa | 1983-04-12 |
| 4351894 | Method of manufacturing a semiconductor device using silicon carbide mask | Toshio Yonezawa, Takashi Ajima, Yutaka Koshino, Yoshitami Oka | 1982-09-28 |
| 4240096 | Fluorine-doped P type silicon | Kuniaki Kumamaru, Masaharu Aoyama, Toshio Yonezawa | 1980-12-16 |
| 4200969 | Semiconductor device with multi-layered metalizations | Masaharu Aoyama, Toshio Yonezawa | 1980-05-06 |