Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7227223 | Power MOS transistor having trench gate | Noboru Matsuda, Hitoshi Kobayashi, Masaru Kawakatsu | 2007-06-05 |
| 6995426 | Semiconductor device having vertical metal insulator semiconductor transistors having plural spatially overlapping regions of different conductivity type | Hideki Okumura, Hitoshi Kobayashi, Masanobu Tsuchitani, Wataru Saito, Masakazu Yamaguchi +1 more | 2006-02-07 |
| 6740931 | Semiconductor device | Shigeo Kouzuki, Hideki Okumura, Hitoshi Kobayashi, Satoshi Aida, Masaru Izumisawa | 2004-05-25 |
| 6627499 | Semiconductor device and method of manufacturing the same | — | 2003-09-30 |
| 6501129 | Semiconductor device | — | 2002-12-31 |
| 6239464 | Semiconductor gate trench with covered open ends | Masanobu Tsuchitani, Keita Suzuki, Yoshiro Baba | 2001-05-29 |
| 6084263 | Power device having high breakdown voltage and method of manufacturing the same | Masanobu Tsuchitani, Shizue Hori | 2000-07-04 |
| 6060747 | Semiconductor device | Hideki Okumura, Yoshiro Baba, Noboru Matsuda, Masanobu Tsuchitani | 2000-05-09 |
| 6031276 | Semiconductor device and method of manufacturing the same with stable control of lifetime carriers | Yoshiro Baba, Masanobu Tsuchitani, Shizue Hori | 2000-02-29 |
| 6010950 | Method of manufacturing semiconductor bonded substrate | Hideki Okumura, Yoshiro Baba | 2000-01-04 |
| 5731637 | Semiconductor device | Shizue Hori, Yoshiro Baba, Shigeo Yawata | 1998-03-24 |
| 5578508 | Vertical power MOSFET and process of fabricating the same | Yoshiro Baba, Satoshi Yanagiya, Noboru Matsuda, Masanobu Tsuchitani | 1996-11-26 |
| 5554872 | Semiconductor device and method of increasing device breakdown voltage of semiconductor device | Yoshiro Baba, Shunichi Hiraki | 1996-09-10 |
| 5250446 | Method of manufacturing a semiconductor device by forming at least three regions of different lifetimes of carriers at different depths | Yoshiro Baba, Mitsuhiko Kitagawa, Tetsujiro Tsunoda | 1993-10-05 |
| 5243205 | Semiconductor device with overvoltage protective function | Mitsuhiko Kitagawa, Tetsujiro Tsunoda | 1993-09-07 |
| 5242845 | Method of production of vertical MOS transistor | Yoshiro Baba, Shunichi Hiraki, Satoshi Yanagiya | 1993-09-07 |
| 5126817 | Dielectrically isolated structure for use in soi-type semiconductor device | Yoshiro Baba, Yutaka Koshino, Kenji Yamawaki | 1992-06-30 |
| 5126807 | Vertical MOS transistor and its production method | Yoshiro Baba, Shunichi Hiraki, Satoshi Yanagiya | 1992-06-30 |
| 5084408 | Method of making complete dielectric isolation structure in semiconductor integrated circuit | Yoshiro Baba, Yutaka Koshino, Satoshi Yanagiya | 1992-01-28 |
| 5029324 | Semiconductor device having a semiconductive protection layer | Yutaka Koshino, Yoshiro Baba | 1991-07-02 |
| 4984052 | Bonded substrate of semiconductor elements having a high withstand voltage | Yutaka Koshino, Yoshiro Baba, Satoshi Yanagiya | 1991-01-08 |