Issued Patents All Time
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 4853760 | Semiconductor device having insulating layer including polyimide film | Masahiro Abe, Masaharu Aoyama, Jiro Ohshima | 1989-08-01 |
| 4636832 | Semiconductor device with an improved bonding section | Masahiro Abe, Masaharu Aoyama, Toshio Yonezawa | 1987-01-13 |
| 4618878 | Semiconductor device having a multilayer wiring structure using a polyimide resin | Masaharu Aoyama, Masahiro Abe, Toshio Yonezawa | 1986-10-21 |
| 4613888 | Semiconductor device of multilayer wiring structure | Yasukazu Mase, Masahiro Abe, Masaharu Aoyama | 1986-09-23 |
| 4560642 | Method of manufacturing a semiconductor device | Toshio Yonezawa, Shunichi Hiraki, Yutaka Koshino, Yoshitami Oka | 1985-12-24 |
| 4520041 | Method for forming metallization structure having flat surface on semiconductor substrate | Masaharu Aoyama, Masahiro Abe, Toshio Yonezawa | 1985-05-28 |
| 4515642 | Method of forming deep aluminum doped silicon by implanting Al and Si ions through alumina layer and device formed thereby | Jiro Ohshima, Yutaka Koshino | 1985-05-07 |
| 4479830 | Method of manufacturing a semiconductor device using epitaxially regrown protrusion as an alignment marker | Yutaka Koshino, Jiro Ohshima, Toshio Yonezawa | 1984-10-30 |
| 4462856 | System for etching a metal film on a semiconductor wafer | Masahiro Abe, Toshio Yonezawa, Masaharu Aoyama | 1984-07-31 |
| 4426234 | Method of forming reproducible impurity zone of gallium or aluminum in a wafer by implanting through composite layers and diffusion annealing | Jiro Ohshima, Yutaka Koshino, Toshio Yonezawa | 1984-01-17 |
| 4415372 | Method of making transistors by ion implantations, electron beam irradiation and thermal annealing | Yutaka Koshino, Toshio Yonezawa, Jiro Ohshima | 1983-11-15 |
| 4404736 | Method for manufacturing a semiconductor device of mesa type | Yutaka Koshino, Jiro Ohshima, Masahiro Abe | 1983-09-20 |
| 4351894 | Method of manufacturing a semiconductor device using silicon carbide mask | Toshio Yonezawa, Shunichi Hiraki, Yutaka Koshino, Yoshitami Oka | 1982-09-28 |
| 4224636 | Semiconductor device with thermally compensating SiO.sub.2 -silicate glass-SiC passivation layer | Toshio Yonezawa, Masato Uchida | 1980-09-23 |