Issued Patents All Time
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5382549 | Method of manufacturing polycrystalline silicon having columnar orientation | Toshiyo Motozima | 1995-01-17 |
| 5102826 | Method of manufacturing a semiconductor device having a silicide layer | Shin-ichi Taka, Toshiyo Motozima, Hiroshi Naruse | 1992-04-07 |
| 4975381 | Method of manufacturing super self-alignment technology bipolar transistor | Shin-ichi Taka | 1990-12-04 |
| 4871685 | Method of manufacturing bipolar transistor with self-aligned external base and emitter regions | Shin-ichi Taka | 1989-10-03 |
| 4853342 | Method of manufacturing semiconductor integrated circuit device having transistor | Shin-ichi Taka | 1989-08-01 |
| 4853760 | Semiconductor device having insulating layer including polyimide film | Masahiro Abe, Masaharu Aoyama, Takashi Ajima | 1989-08-01 |
| 4780426 | Method for manufacturing high-breakdown voltage semiconductor device | Yutaka Koshino, Yoshiro Baba | 1988-10-25 |
| 4766086 | Method of gettering a semiconductor device and forming an isolation region therein | Shin-ichi Taka, Toshiyo Ito, Masaharu Aoyama | 1988-08-23 |
| 4717682 | Method of manufacturing a semiconductor device with conductive trench sidewalls | Shin-ichi Taka, Masahiro Abe, Masaharu Aoyama | 1988-01-05 |
| 4543707 | Method of forming through holes by differential etching of stacked silicon oxynitride layers | Toshiyo Ito | 1985-10-01 |
| 4515642 | Method of forming deep aluminum doped silicon by implanting Al and Si ions through alumina layer and device formed thereby | Takashi Ajima, Yutaka Koshino | 1985-05-07 |
| 4502207 | Wiring material for semiconductor device and method for forming wiring pattern therewith | Masahiro Abe, Yutaka Koshino | 1985-03-05 |
| 4479830 | Method of manufacturing a semiconductor device using epitaxially regrown protrusion as an alignment marker | Yutaka Koshino, Takashi Ajima, Toshio Yonezawa | 1984-10-30 |
| 4426234 | Method of forming reproducible impurity zone of gallium or aluminum in a wafer by implanting through composite layers and diffusion annealing | Yutaka Koshino, Takashi Ajima, Toshio Yonezawa | 1984-01-17 |
| 4415372 | Method of making transistors by ion implantations, electron beam irradiation and thermal annealing | Yutaka Koshino, Toshio Yonezawa, Takashi Ajima | 1983-11-15 |
| 4404736 | Method for manufacturing a semiconductor device of mesa type | Yutaka Koshino, Takashi Ajima, Masahiro Abe | 1983-09-20 |
| 4334349 | Method of producing semiconductor device | Masaharu Aoyama, Toshio Yonezawa | 1982-06-15 |