Issued Patents All Time
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5266526 | Method of forming trench buried wiring for semiconductor device | Masahiro Abe | 1993-11-30 |
| 5175115 | Method of controlling metal thin film formation conditions | Masahiro Abe, Yasukazu Mase, Toshihiko Katsura | 1992-12-29 |
| 4853760 | Semiconductor device having insulating layer including polyimide film | Masahiro Abe, Jiro Ohshima, Takashi Ajima | 1989-08-01 |
| 4766086 | Method of gettering a semiconductor device and forming an isolation region therein | Jiro Ohshima, Shin-ichi Taka, Toshiyo Ito | 1988-08-23 |
| 4728627 | Method of making multilayered interconnects using hillock studs formed by sintering | Yasukazu Mase, Masahiro Abe | 1988-03-01 |
| 4717682 | Method of manufacturing a semiconductor device with conductive trench sidewalls | Shin-ichi Taka, Jiro Ohshima, Masahiro Abe | 1988-01-05 |
| 4636832 | Semiconductor device with an improved bonding section | Masahiro Abe, Takashi Ajima, Toshio Yonezawa | 1987-01-13 |
| 4634496 | Method for planarizing the surface of an interlayer insulating film in a semiconductor device | Yasukazu Mase, Masahiro Abe | 1987-01-06 |
| 4618878 | Semiconductor device having a multilayer wiring structure using a polyimide resin | Masahiro Abe, Takashi Ajima, Toshio Yonezawa | 1986-10-21 |
| 4613888 | Semiconductor device of multilayer wiring structure | Yasukazu Mase, Masahiro Abe, Takashi Ajima | 1986-09-23 |
| 4561009 | Semiconductor device | Toshio Yonezawa | 1985-12-24 |
| 4520041 | Method for forming metallization structure having flat surface on semiconductor substrate | Masahiro Abe, Takashi Ajima, Toshio Yonezawa | 1985-05-28 |
| 4507673 | Semiconductor memory device | Shunichi Hiraki, Toshio Yonezawa | 1985-03-26 |
| 4462856 | System for etching a metal film on a semiconductor wafer | Masahiro Abe, Toshio Yonezawa, Takashi Ajima | 1984-07-31 |
| 4433004 | Semiconductor device and a method for manufacturing the same | Toshio Yonezawa | 1984-02-21 |
| 4403392 | Method of manufacturing a semiconductor device | Jiro Oshima, Seiji Yasuda, Toshio Yonezawa | 1983-09-13 |
| 4334349 | Method of producing semiconductor device | Jiro Ohshima, Toshio Yonezawa | 1982-06-15 |
| 4240096 | Fluorine-doped P type silicon | Shunichi Hiraki, Kuniaki Kumamaru, Toshio Yonezawa | 1980-12-16 |
| 4200969 | Semiconductor device with multi-layered metalizations | Shunichi Hiraki, Toshio Yonezawa | 1980-05-06 |