Issued Patents All Time
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6989568 | Lateral high-breakdown-voltage transistor having drain contact region | Keisuke Matsuoka, Takao Ito | 2006-01-24 |
| 6707104 | Lateral high-breakdown-voltage transistor | Keisuke Matsuoka, Takao Ito | 2004-03-16 |
| 6489653 | Lateral high-breakdown-voltage transistor | Keisuke Matsuoka, Takao Ito | 2002-12-03 |
| 6025622 | Conductivity modulated MOSFET | Akio Nakagawa, Hiromichi Ohashi, Yoshihiro Yamaguchi, Thuneo Thukakoshi | 2000-02-15 |
| 5780887 | Conductivity modulated MOSFET | Akio Nakagawa, Hiromichi Ohashi, Yoshihiro Yamaguchi, Thuneo Thukakoshi | 1998-07-14 |
| 5463231 | Method of operating thyristor with insulated gates | Tsuneo Ogura, Akio Nakagawa, Yoshihiro Yamaguchi, Norio Yasuhara, Tomoko Matsudai +2 more | 1995-10-31 |
| 5428228 | Method of operating thyristor with insulated gates | Tsuneo Ogura, Akio Nakagawa, Yoshihiro Yamaguchi, Norio Yasuhara, Tomoko Matsudai +2 more | 1995-06-27 |
| 5315134 | Thyristor with insulated gate | Tsuneo Ogura, Akio Nakagawa, Yoshihiro Yamaguchi, Norio Yasuhara, Tomoko Matsudai | 1994-05-24 |
| 5286984 | Conductivity modulated MOSFET | Akio Nakagawa, Hiromichi Ohashi, Yoshihiro Yamaguchi, Thuneo Thukakoshi | 1994-02-15 |
| 5237186 | Conductivity-modulation metal oxide field effect transistor with single gate structure | Akio Nakagawa, Yoshihiro Yamaguchi | 1993-08-17 |
| 5168333 | Conductivity-modulation metal oxide semiconductor field effect transistor | Akio Nakagawa, Yoshihiro Yamaguchi | 1992-12-01 |
| 5124773 | Conductivity-modulation metal oxide semiconductor field effect transistor | Akio Nakagawa, Yoshihiro Yamaguchi | 1992-06-23 |
| 5105243 | Conductivity-modulation metal oxide field effect transistor with single gate structure | Akio Nakagawa, Yoshihiro Yamaguchi | 1992-04-14 |
| 5093701 | Conductivity modulated MOSFET | Akio Nakagawa, Hiromichi Ohashi, Yoshihiro Yamaguchi, Thuneo Thukakoshi | 1992-03-03 |
| 5086323 | Conductivity modulated MOSFET | Akio Nakagawa, Hiromichi Ohashi, Yoshihiro Yamaguchi, Thuneo Thukakoshi | 1992-02-04 |
| 5086332 | Planar semiconductor device having high breakdown voltage | Akio Nakagawa, Yutaka Koshino, Yoshihiro Yamaguchi, Yoshiro Baba | 1992-02-04 |
| 5068700 | Lateral conductivity modulated MOSFET | Yoshihiro Yamaguchi, Akio Nakagawa | 1991-11-26 |
| 4980743 | Conductivity-modulation metal oxide semiconductor field effect transistor | Akio Nakagawa, Yoshihiro Yamaguchi | 1990-12-25 |
| 4928155 | Lateral conductivity modulated MOSFET | Akio Nakagawa, Hiromichi Ohashi, Yoshihiro Yamaguchi, Thuneo Thukakoshi | 1990-05-22 |
| 4881120 | Conductive modulated MOSFET | Akio Nakagawa, Hiromichi Ohashi, Yoshihiro Yamaguchi, Thuneo Thukakoshi | 1989-11-14 |
| 4878957 | Dielectrically isolated semiconductor substrate | Yoshihiro Yamaguchi, Akio Nakagawa, Kazuyoshi Furukama, Kiyoshi Fukuda, Katsujiro Tanzawa | 1989-11-07 |
| RE32784 | Conductivity modulated MOS transistor device | Akio Nakagawa | 1988-11-15 |
| 4782372 | Lateral conductivity modulated MOSFET | Akio Nakagawa, Hiromichi Ohashi, Yoshihiro Yamaguchi, Thuneo Thukakoshi | 1988-11-01 |
| 4680604 | Conductivity modulated MOS transistor device | Akio Nakagawa | 1987-07-14 |
| 4672407 | Conductivity modulated MOSFET | Akio Nakagawa, Hiromichi Ohashi, Yoshihiro Yamaguchi, Thuneo Thukakoshi | 1987-06-09 |