ZR

Zoltan Ring

CR Cree: 23 patents #61 of 639Top 10%
WO Wolfspeed: 1 patents #111 of 187Top 60%
Overall (All Time): #172,016 of 4,157,543Top 5%
24
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
11316028 Nitride-based transistors with a protective layer and a low-damage recess Scott Sheppard, Richard Peter Smith 2022-04-26
10367074 Method of forming vias in silicon carbide and resulting devices and circuits Scott Sheppard, Helmut Hagleitner 2019-07-30
9934983 Stress mitigation for thin and thick films used in semiconductor circuitry Donald A. Gajewski, Scott Sheppard, Daniel Namishia 2018-04-03
9812338 Encapsulation of advanced devices using novel PECVD and ALD schemes Helmut Hagleitner, Daniel Namishia 2017-11-07
9761439 PECVD protective layers for semiconductor devices Sei-Hyung Ryu, Daniel Namishia 2017-09-12
9607955 Contact pad Van Mieczkowski, Jason Gurganus, Helmut Hagleitner 2017-03-28
9530647 Devices including ultra-short gates and methods of forming same Dan Namishia 2016-12-27
9490169 Method of forming vias in silicon carbide and resulting devices and circuits Scott Sheppard, Helmut Hagleitner 2016-11-08
9269662 Using stress reduction barrier sub-layers in a semiconductor die Helmut Hagleitner, Daniel Namishia, Fabian Radulescu 2016-02-23
9142631 Multilayer diffusion barriers for wide bandgap Schottky barrier devices Van Mieczkowski, Helmut Hagleitner 2015-09-22
8994073 Hydrogen mitigation schemes in the passivation of advanced devices Helmut Hagleitner 2015-03-31
8563372 Methods of forming contact structures including alternating metal and silicon layers and related devices Helmut Hagleitner, Scott Sheppard, Jason Henning, Jason Gurganus, Dan Namishia 2013-10-22
8202796 Method of forming vias in silicon carbide and resulting devices and circuits Scott Sheppard, Helmut Hagleitner 2012-06-19
7906799 Nitride-based transistors with a protective layer and a low-damage recess Scott Sheppard, Richard Peter Smith 2011-03-15
7892974 Method of forming vias in silicon carbide and resulting devices and circuits Scott Sheppard, Helmut Hagleitner 2011-02-22
7858460 Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides Helmut Hagleitner, Jason Henning, Andrew Mackenzie, Scott Allen, Scott Sheppard +3 more 2010-12-28
7855401 Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides Scott Sheppard, Richard Peter Smith 2010-12-21
7525122 Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides Helmut Hagleitner, Jason Henning, Andrew Mackenzie, Scott Allen, Scott Sheppard +3 more 2009-04-28
7125786 Method of forming vias in silicon carbide and resulting devices and circuits Scott Sheppard, Helmut Hagleitner 2006-10-24
7045404 Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof Scott Sheppard, Richard Peter Smith 2006-05-16
6946739 Layered semiconductor devices with conductive vias — 2005-09-20
6649497 Method of forming vias in silicon carbide and resulting devices and circuits — 2003-11-18
6515303 Method of forming vias in silicon carbide and resulting devices and circuits — 2003-02-04
6475889 Method of forming vias in silicon carbide and resulting devices and circuits — 2002-11-05