| 9543516 |
Method for forming a doped metal oxide for use in resistive switching memory elements |
Jinhong Tong, Imran Hashim, Vidyut Gopal |
2017-01-10 |
| 9425394 |
Doped oxide dielectrics for resistive random access memory cells |
Brian R. Butcher, Yun Wang |
2016-08-23 |
| 9276203 |
Resistive switching layers including Hf-Al-O |
Chien-Lan Hsueh, Tim Minvielle, Jinhong Tong, Yun Wang, Takeshi Yamaguchi |
2016-03-01 |
| 9246099 |
Low-temperature deposition of nitrides by UV-assisted ALD or CVD |
Chien-Lan Hsueh |
2016-01-26 |
| 9246096 |
Atomic layer deposition of metal oxides for memory applications |
Zhendong Hong, Vidyut Gopal, Imran Hashim, Tim Minvielle, Hieu Pham +1 more |
2016-01-26 |
| 9065040 |
Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition |
Chien-Lan Hsueh, Vidyut Gopal, Takeshi Yamaguchi |
2015-06-23 |
| 9040413 |
Using saturated and unsaturated ALD processes to deposit oxides as ReRAM switching layer |
Chien-Lan Hsueh, Yun Wang |
2015-05-26 |
| 9018068 |
Nonvolatile resistive memory element with a silicon-based switching layer |
Chien-Lan Hsueh, Yun Wang |
2015-04-28 |
| 9018037 |
Vertical oxide-oxide interface for forming-free, low power and low variability RRAM devices |
Federico Nardi, Robert A. Huertas, Yun Wang |
2015-04-28 |
| 9006696 |
Metal aluminum nitride embedded resistors for resistive random memory access cells |
Mihir Tendulkar, Chien-Lan Hsueh |
2015-04-14 |
| 9006026 |
Atomic layer deposition of metal oxides for memory applications |
Zhendong Hong, Vidyut Gopal, Imran Hashim, Tim Minvielle, Hieu Pham +1 more |
2015-04-14 |
| 8969129 |
ReRAM cells including TaXSiYN embedded resistors |
Chien-Lan Hsueh, Mihir Tendulkar |
2015-03-03 |
| 8883557 |
Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition |
Chien-Lan Hsueh, Vidyut Gopal, Takeshi Yamaguchi |
2014-11-11 |
| 8853661 |
Metal aluminum nitride embedded resistors for resistive random memory access cells |
Mihir Tendulkar, Chien-Lan Hsueh |
2014-10-07 |
| 8846443 |
Atomic layer deposition of metal oxides for memory applications |
Zhendong Hong, Hieu Pham, Vidyut Gopal, Imran Hashim, Tim Minvielle +1 more |
2014-09-30 |
| 8835890 |
ReRAM cells including TaXSiYN embedded resistors |
Chien-Lan Hsueh, Mihir Tendulkar |
2014-09-16 |
| 8802492 |
Method for forming resistive switching memory elements |
Jinhong Tong, Imran Hashim, Vidyut Gopal |
2014-08-12 |
| 8791445 |
Interfacial oxide used as switching layer in a nonvolatile resistive memory element |
Tony P. Chiang, Ryan Clarke, Vidyut Gopal, Imran Hashim, Robert A. Huertas +1 more |
2014-07-29 |
| 8741698 |
Atomic layer deposition of zirconium oxide for forming resistive-switching materials |
Jinhong Tong, Vidyut Gopal, Imran Hashim, Albert S. Lee |
2014-06-03 |