Issued Patents All Time
Showing 25 most recent of 61 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12293351 | Peer-to-peer data object transfer and state management | Matthew Hickman, Steven Austin, Benjamin Shen | 2025-05-06 |
| 11842345 | Rewards for a virtual cash card | Benjamin Shen, Rebecca Corcillo, Owen Jennings | 2023-12-12 |
| 11526882 | Cryptocurrency rewards for a virtual cash card | Benjamin Shen, Rebecca Corcillo, Owen Jennings | 2022-12-13 |
| 10217838 | Semiconductor structure with multiple transistors having various threshold voltages | Dalong Zhao, Teymur Bakhishev, Lance Scudder, Paul E. Gregory, U.C. Sridharan +3 more | 2019-02-26 |
| 10014387 | Semiconductor structure with multiple transistors having various threshold voltages | Dalong Zhao, Teymur Bakhishev, Lance Scudder, Paul E. Gregory, U.C. Sridharan +3 more | 2018-07-03 |
| 9812550 | Semiconductor structure with multiple transistors having various threshold voltages | Dalong Zhao, Teymur Bakhishev, Lance Scudder, Paul E. Gregory, U.C. Sridharan +3 more | 2017-11-07 |
| 9391076 | CMOS structures and processes based on selective thinning | Scott E. Thompson, Thomas Hoffmann, Lance Scudder, Urupattur C. Sridharan, Dalong Zhao +2 more | 2016-07-12 |
| 9368624 | Method for fabricating a transistor with reduced junction leakage current | Scott E. Thompson, Lucian Shifren, Pushkar Ranade, Yujie Liu, Sung Hwan Kim +5 more | 2016-06-14 |
| 9299698 | Semiconductor structure with multiple transistors having various threshold voltages | Dalong Zhao, Teymur Bakhishev, Lance Scudder, Paul E. Gregory, U.C. Sridharan +3 more | 2016-03-29 |
| 9196727 | High uniformity screen and epitaxial layers for CMOS devices | Scott E. Thompson, Lucian Shifren, Pushkar Ranade, Yujie Liu, Sung Hwan Kim +5 more | 2015-11-24 |
| 9041126 | Deeply depleted MOS transistors having a screening layer and methods thereof | Thomas Hoffmann, Lucian Shifren, Scott E. Thompson, Pushkar Ranade, Jing Wang +10 more | 2015-05-26 |
| 8999861 | Semiconductor structure with substitutional boron and method for fabrication thereof | Lance Scudder, Pushkar Ranade, Charles Stager, Lucian Shifren, Dalong Zhao +1 more | 2015-04-07 |
| 8883600 | Transistor having reduced junction leakage and methods of forming thereof | Scott E. Thompson, Lucian Shifren, Pushkar Ranade, Yujie Liu, Sung Hwan Kim +5 more | 2014-11-11 |
| 8614128 | CMOS structures and processes based on selective thinning | Scott E. Thompson, Thomas Hoffmann, Lance Scudder, U.C. Sridharan, Dalong Zhao +2 more | 2013-12-24 |
| 8293460 | Double exposure patterning with carbonaceous hardmask | Hui-Wan Chen, Chorng-Ping Chang, Yongmei Chen, Huixiong Dai, Jiahua Yu +7 more | 2012-10-23 |
| 7459319 | Method and apparatus for characterizing features formed on a substrate | Michael C. Smayling, Susie Xiuru Yang | 2008-12-02 |
| 7196350 | Method and apparatus for characterizing features formed on a substrate | Michael C. Smayling, Susie Xiuru Yang | 2007-03-27 |
| 6743685 | Semiconductor device and method for lowering miller capacitance for high-speed microprocessors | David Wu, Scott Luning | 2004-06-01 |
| 6727558 | Channel isolation using dielectric isolation structures | David Wu, Massud Aminpur, Scott Luning | 2004-04-27 |
| 6617219 | Semiconductor device and method for lowering miller capacitance by modifying source/drain extensions for high speed microprocessors | David Wu, Massud Aminpur, Scott Luning | 2003-09-09 |
| 6420730 | Elevated transistor fabrication technique | Mark I. Gardner, Daniel Kadosh | 2002-07-16 |
| 6376350 | Method of forming low resistance gate electrode | Jeffrey C. Haines, Frederick N. Hause | 2002-04-23 |
| 6329695 | Merged sidewall spacer formed between series-connected MOSFETs for improved integrated circuit operation | Steven E. Bourland | 2001-12-11 |
| 6300661 | Mutual implant region used for applying power/ground to a source of a transistor and a well of a substrate | Daniel Kadosh, Mark I. Gardner | 2001-10-09 |
| 6200862 | Mask for asymmetrical transistor formation with paired transistors | Mark I. Gardner, Frederick N. Hause | 2001-03-13 |