Issued Patents All Time
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12003231 | Double gate transistor device and method of operating | Jens Barrenscheen, Anton Mauder | 2024-06-04 |
| 11250966 | Apparatus and method for neutron transmutation doping of semiconductor wafers | Hans-Joachim Schulze, Werner Schustereder | 2022-02-15 |
| 11075290 | Power semiconductor device having a cross-trench arrangement | Matteo Dainese, Alexander Philippou, Ingo Dirnstorfer, Erich Griebl, Christian Jaeger +3 more | 2021-07-27 |
| 10978596 | Power diode and method of manufacturing a power diode | Anton Mauder, Mario Barusic, Matteo Dainese | 2021-04-13 |
| 10923578 | Semiconductor device comprising a barrier region | Caspar Leendertz, Matteo Dainese, Alice Pei-Shan Hsieh, Christian Philipp Sandow | 2021-02-16 |
| 10903353 | Double gate transistor device and method of operating | Anton Mauder, Jens Barrenscheen | 2021-01-26 |
| 10840362 | IGBT with dV/dt controllability | Alexander Philippou, Matteo Dainese, Christian Jaeger, Johannes Georg Laven, Francisco Javier Santos Rodriguez +3 more | 2020-11-17 |
| 10644141 | Power semiconductor device with dV/dt controllability | Caspar Leendertz, Christian Philipp Sandow | 2020-05-05 |
| 10615272 | Method for producing IGBT with dV/dt controllability | Antonio Vellei, Matteo Dainese, Christian Jaeger, Johannes Georg Laven, Alexander Philippou +1 more | 2020-04-07 |
| 10546939 | N-channel bipolar power semiconductor device with P-layer in the drift volume | Roman Baburske, Hans-Joachim Schulze, Oana Julia Spulber | 2020-01-28 |
| 10530360 | Double gate transistor device and method of operating | Anton Mauder, Jens Barrenscheen | 2020-01-07 |
| 10468148 | Apparatus and method for neutron transmutation doping of semiconductor wafers | Hans-Joachim Schulze, Werner Schustereder | 2019-11-05 |
| 10355116 | Power semiconductor device | Thomas Basler, Matteo Dainese, Hans-Joachim Schulze | 2019-07-16 |
| 10332973 | N-channel bipolar power semiconductor device with p-layer in the drift volume | Roman Baburske, Hans-Joachim Schulze, Oana Julia Spulber | 2019-06-25 |
| 10304952 | Power semiconductor device with dV/dt controllability and cross-trench arrangement | Matteo Dainese, Alexander Philippou, Ingo Dirnstorfer, Erich Griebl, Christian Jaeger +3 more | 2019-05-28 |
| 10276681 | Double gate transistor device and method of operating | Anton Mauder, Jens Barrenscheen | 2019-04-30 |
| 10153764 | Current measurement in a power semiconductor device | Jens Barrenscheen, Anton Mauder | 2018-12-11 |
| 10109624 | Semiconductor device comprising transistor cell units with different threshold voltages | Franz-Josef Niedernostheide, Alexander Philippou | 2018-10-23 |
| 9978851 | n-channel bipolar power semiconductor device with p-layer in the drift volume | Roman Baburske, Hans-Joachim Schulze, Oana Julia Spulber | 2018-05-22 |