| 9590056 |
Semiconductor device comprising contact structures with protection layers formed on sidewalls of contact etch stop layers |
Kai Frohberg, Marco Lepper |
2017-03-07 |
| 9269809 |
Methods for forming protection layers on sidewalls of contact etch stop layers |
Kai Frohberg, Marco Lepper |
2016-02-23 |
| 8941182 |
Buried sublevel metallizations for improved transistor density |
Kai Frohberg, Dominik Olligs, Jens Heinrich |
2015-01-27 |
| 8883582 |
High-K gate electrode structure formed after transistor fabrication by using a spacer |
Kai Frohberg, Uwe Griebenow, Heike Berthold |
2014-11-11 |
| 8536052 |
Semiconductor device comprising contact elements with silicided sidewall regions |
Jens Heinrich, Kai Frohberg |
2013-09-17 |
| 8536050 |
Selective shrinkage of contact elements in a semiconductor device |
Kai Frohberg, Ralf Richter, Torsten Huisinga |
2013-09-17 |
| 8497583 |
Stress reduction in chip packaging by a stress compensation region formed around the chip |
Dmytro Chumakov, Michael Grillberger, Heike Berthold |
2013-07-30 |
| 8492217 |
Methods of forming conductive contacts with reduced dimensions |
Kai Frohberg, Dominik Olligs, Daniel Prochnow |
2013-07-23 |
| 8470661 |
High-K gate electrode structure formed after transistor fabrication by using a spacer |
Kai Frohberg, Uwe Griebenow, Heike Berthold |
2013-06-25 |
| 8440534 |
Threshold adjustment for MOS devices by adapting a spacer width prior to implantation |
Uwe Griebenow, Jan Hoentschel, Kai Frohberg, Heike Berthold, Frank Feustel +1 more |
2013-05-14 |
| 8361844 |
Method for adjusting the height of a gate electrode in a semiconductor device |
Kai Frohberg, Heike Berthold, Uwe Griebenow |
2013-01-29 |
| 8349744 |
Double deposition of a stress-inducing layer in an interlayer dielectric with intermediate stress relaxation in a semiconductor device |
Kai Frohberg, Uwe Griebenow, Heike Berthold |
2013-01-08 |
| 8318598 |
Contacts and vias of a semiconductor device formed by a hard mask and double exposure |
Sven Beyer, Kai Frohberg, Kerstin Ruttloff |
2012-11-27 |