Issued Patents All Time
Showing 25 most recent of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11024731 | Power module for supporting high current densities | Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen | 2021-06-01 |
| 10153364 | Power module having a switch module for supporting high current densities | Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen | 2018-12-11 |
| 9865750 | Schottky diode | Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen | 2018-01-09 |
| 9673283 | Power module for supporting high current densities | Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen | 2017-06-06 |
| 9385182 | Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same | Qingchun Zhang, Sei-Hyung Ryu | 2016-07-05 |
| 9318623 | Recessed termination structures and methods of fabricating electronic devices including recessed termination structures | Qingchun Zhang | 2016-04-19 |
| 9240476 | Field effect transistor devices with buried well regions and epitaxial layers | Vipindis Pala, Lin Cheng, Anant Agarwal, John Williams Palmour | 2016-01-19 |
| 9231122 | Schottky diode | Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen | 2016-01-05 |
| 9024327 | Metallization structure for high power microelectronic devices | Allan Ward | 2015-05-05 |
| 8803277 | Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same | Qingchun Zhang, Sei-Hyung Ryu | 2014-08-12 |
| 8680587 | Schottky diode | Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen | 2014-03-25 |
| 8664665 | Schottky diode employing recesses for elements of junction barrier array | Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen | 2014-03-04 |
| 8618582 | Edge termination structure employing recesses for edge termination elements | Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen | 2013-12-31 |
| 8563372 | Methods of forming contact structures including alternating metal and silicon layers and related devices | Helmut Hagleitner, Zoltan Ring, Scott Sheppard, Jason Gurganus, Dan Namishia | 2013-10-22 |
| 8432012 | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same | Qingchun Zhang | 2013-04-30 |
| 8049272 | Transistors having implanted channel layers and methods of fabricating the same | Allan Ward, Alexander V. Suvorov | 2011-11-01 |
| 7915703 | Schottky diodes containing high barrier metal islands in a low barrier metal layer and methods of forming the same | Allan Ward | 2011-03-29 |
| 7880172 | Transistors having implanted channels and implanted P-type regions beneath the source region | Allan Ward, Alexander V. Suvorov | 2011-02-01 |
| 7875545 | Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices | Allan Ward, Helmut Hagleitner, Keith Wieber | 2011-01-25 |
| 7858460 | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides | Zoltan Ring, Helmut Hagleitner, Andrew Mackenzie, Scott Allen, Scott Sheppard +3 more | 2010-12-28 |
| 7737476 | Metal-semiconductor field effect transistors (MESFETs) having self-aligned structures | Saptharishi Sriram, Keith Wieber | 2010-06-15 |
| 7696584 | Reduced leakage power devices by inversion layer surface passivation | Allan Ward | 2010-04-13 |
| 7598576 | Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices | Allan Ward | 2009-10-06 |
| 7525122 | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides | Zoltan Ring, Helmut Hagleitner, Andrew Mackenzie, Scott Allen, Scott Sheppard +3 more | 2009-04-28 |
| 7265399 | Asymetric layout structures for transistors and methods of fabricating the same | Saptharishi Sriram | 2007-09-04 |