Issued Patents All Time
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6686098 | Lithography method and lithography mask | Gunther Czech, Christoph Friedrich, Carsten Fülber, Rainer Käsmaier | 2004-02-03 |
| 6635388 | Contact hole fabrication with the aid of mutually crossing sudden phase shift edges of a single phase shift mask | Christoph Friedrich, Uwe Griesinger, Rainer Pforr, Andreas Grassmann | 2003-10-21 |
| 6515319 | Field-effect-controlled transistor and method for fabricating the transistor | Armin Wieder, Justus Kuhn, Jens Lüpke, Jochen Müller, Peter Pöchmüller +1 more | 2003-02-04 |
| 6503784 | Double gated transistor | Gerhard Enders, Thomas Schulz, Lothar Risch | 2003-01-07 |
| 6472767 | Static random access memory (SRAM) | Gerhard Enders, Thomas Schulz, Lothar Risch | 2002-10-29 |
| 6468812 | Method for producing a semiconductor memory device with a multiplicity of memory cells | Georg Tempel | 2002-10-22 |
| 6459123 | Double gated transistor | Gerhard Enders, Thomas Schulz, Lothar Risch | 2002-10-01 |
| 6404034 | CMOS circuit with all-around dielectrically insulated source-drain regions | Martin Kerber | 2002-06-11 |
| 6319787 | Method for forming a high surface area trench capacitor | Gerhard Enders, Matthias Ilg | 2001-11-20 |
| 6262448 | Memory cell having trench capacitor and vertical, dual-gated transistor | Gerhard Enders, Matthias Ilg, Lothar Risch | 2001-07-17 |
| 6232169 | Method for producing a capacitor | Georg Tempel | 2001-05-15 |
| 6124156 | Process for manufacturing a CMOS circuit with all-around dielectrically insulated source-drain regions | Martin Kerber | 2000-09-26 |
| 6022786 | Method for manufacturing a capacitor for a semiconductor arrangement | Martin Franosch, Wolfgang Hoenlein, Helmut Klose, Gerrit Lange, Volker Lehmann +4 more | 2000-02-08 |
| 5989972 | Capacitor in a semiconductor configuration and process for its production | Hanno Melzner, Wolfgang Hoenlein | 1999-11-23 |
| 5869860 | Ferroelectric memory device and method for producing the device | Georg Tempel | 1999-02-09 |
| 4562640 | Method of manufacturing stable, low resistance contacts in integrated semiconductor circuits | Reiner Sigusch | 1986-01-07 |
| 4382826 | Method of making MIS-field effect transistor having a short channel length | Hans-Jorg Pfleiderer | 1983-05-10 |
| 4356622 | Method of producing low-resistance diffused regions in IC MOS semiconductor circuits in silicon-gate technology metal silicide layer formation | — | 1982-11-02 |
| 4352237 | Method for manufacture of integrated semiconductor circuits, in particular CCD-circuits, with self-adjusting, nonoverlapping polysilicon electrodes | — | 1982-10-05 |
| 4351100 | Method for manufacture of integrated semiconductor circuits, in particular CCD-circuits, with self-adjusting, nonoverlapping polysilicon electrodes | — | 1982-09-28 |
| 4313256 | Method of producing integrated MOS circuits via silicon gate technology | — | 1982-02-02 |
| 4291321 | MIS-field effect transistor having a short channel length and method of making the same | Hans-Jorg Pfleiderer | 1981-09-22 |
| 4268563 | Radiation mask for producing structural configurations in photo-sensitive resists by X-ray exposure | — | 1981-05-19 |
| 4211888 | Arrangement with several thermal elements in series connection | Karl-Ulrich Stein, Heiner Herbst | 1980-07-08 |