DG

David C. Gilmer

FS Freeescale Semiconductor: 9 patents #343 of 3,767Top 10%
Motorola: 3 patents #3,303 of 12,470Top 30%
SE Sematech: 1 patents #38 of 123Top 35%
Overall (All Time): #385,181 of 4,157,543Top 10%
13
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
8432020 Capacitors, systems, and methods Chanro Park, Sangduk Park, Paul Kirsch, Chang Yong Kang, Joel Barnett 2013-04-30
8178401 Method for fabricating dual-metal gate device Srikanth B. Samavedam, Philip J. Tobin 2012-05-15
7868389 Electronic device comprising a gate electrode including a metal-containing layer having one or more impurities Olubunmi O. Adetutu, Philip J. Tobin 2011-01-11
7683439 Semiconductor device having a metal carbide gate with an electropositive element and a method of making the same Srikanth B. Samavedam, Mark V. Raymond, James K. Schaeffer 2010-03-23
7655550 Method of making metal gate transistors James K. Schaeffer, Mark V. Raymond, Philip J. Tobin, Srikanth B. Samavedam 2010-02-02
7432164 Semiconductor device comprising a transistor having a counter-doped channel region and method for forming the same Olubunmi O. Adetutu, Philip J. Tobin 2008-10-07
7297588 Electronic device comprising a gate electrode including a metal-containing layer having one or more impurities and a process for forming the same Olubunmi O. Adetutu, Philip J. Tobin 2007-11-20
7015153 Method for forming a layer using a purging gas in a semiconductor process Dina H. Triyoso, Olubunmi O. Adetutu, Darrell Roan, James K. Schaeffer, Philip J. Tobin +1 more 2006-03-21
6972224 Method for fabricating dual-metal gate device Srikanth B. Samavedam, Philip J. Tobin 2005-12-06
6787421 Method for forming a dual gate oxide device using a metal oxide and resulting device Christopher C. Hobbs, Hsing-Huang Tseng 2004-09-07
6717226 Transistor with layered high-K gate dielectric and method therefor Rama I. Hegde, Joe Mogab, Philip J. Tobin, Hsing-Huang Tseng, Chun-Li Liu +3 more 2004-04-06
6573160 Method of recrystallizing an amorphous region of a semiconductor William J. Taylor, Jr., Marius Orlowski, Prasad Alluri, Christopher C. Hobbs, Michael Rendon +1 more 2003-06-03
6348386 Method for making a hafnium-based insulating film 2002-02-19