Issued Patents All Time
Showing 526–550 of 581 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9349809 | Aspect ratio trapping and lattice engineering for III/V semiconductors | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-05-24 |
| 9349594 | Non-planar semiconductor device with aspect ratio trapping | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-05-24 |
| 9343529 | Method of formation of germanium nanowires on bulk substrates | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-05-17 |
| 9331201 | Multi-height FinFETs with coplanar topography background | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-05-03 |
| 9330908 | Semiconductor structure with aspect ratio trapping capabilities | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-05-03 |
| 9324843 | High germanium content silicon germanium fins | Karthik Balakrishnan, John Bruley, Ali Khakifirooz, John A. Ott, Alexander Reznicek | 2016-04-26 |
| 9324795 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-04-26 |
| 9324796 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-04-26 |
| 9324797 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-04-26 |
| 9324867 | Method to controllably etch silicon recess for ultra shallow junctions | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-04-26 |
| 9318553 | Nanowire device with improved epitaxy | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-04-19 |
| 9318318 | 3D atomic layer gate or junction extender | Kevin K. Chan, Effendi Leobandung, Dae-Gyu Park, Min Yang | 2016-04-19 |
| 9318580 | U-shaped semiconductor structure | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2016-04-19 |
| 9312128 | Compound semiconductor integrated circuit and method to fabricate same | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-04-12 |
| 9312173 | Self-limiting silicide in highly scaled fin technology | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-04-12 |
| 9306038 | Shallow extension junction | Kevin K. Chan, Effendi Leobandung, Dae-Gyu Park, Min Yang | 2016-04-05 |
| 9299837 | Integrated circuit having MOSFET with embedded stressor and method to fabricate same | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-03-29 |
| 9299777 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-03-29 |
| 9299787 | Forming IV fins and III-V fins on insulator | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-03-29 |
| 9293532 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-03-22 |
| 9293373 | Method for fabricating CMOS finFETs with dual channel material | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-03-22 |
| 9293530 | High aspect ratio trapping semiconductor with uniform height and isolated from bulk substrate | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-03-22 |
| 9287358 | Stressed nanowire stack for field effect transistor | Martin M. Frank, Ali Khakifirooz, Alexander Reznicek | 2016-03-15 |
| 9275854 | Compound semiconductor integrated circuit and method to fabricate same | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-03-01 |
| 9263584 | Field effect transistors employing a thin channel region on a crystalline insulator structure | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-02-16 |