Issued Patents All Time
Showing 551–575 of 581 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9263464 | Field effect transistors including contoured channels and planar channels | Anirban Basu | 2016-02-16 |
| 9257527 | Nanowire transistor structures with merged source/drain regions using auxiliary pillars | Ali Khakifirooz, Alexander Reznicek | 2016-02-09 |
| 9252017 | Stacked nanowire | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-02-02 |
| 9252016 | Stacked nanowire | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-02-02 |
| 9236463 | Compressive strained III-V complementary metal oxide semiconductor (CMOS) device | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-01-12 |
| 9224822 | High percentage silicon germanium alloy fin formation | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2015-12-29 |
| 9219154 | Method of fabricating electrostatically enhanced fins and stacked nanowire field effect transistors | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2015-12-22 |
| 9214567 | Nanowire compatible E-fuse | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2015-12-15 |
| 9202812 | Abrupt source/drain junction formation using a diffusion facilitation layer | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2015-12-01 |
| 9202893 | U-shaped semiconductor structure | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2015-12-01 |
| 9196479 | Method of co-integration of strained silicon and strained germanium in semiconductor devices including fin structures | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2015-11-24 |
| 9153647 | Integrated circuit having heterostructure FinFET with tunable device parameters and method to fabricate same | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2015-10-06 |
| 9129938 | Methods of forming germanium-containing and/or III-V nanowire gate-all-around transistors | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2015-09-08 |
| 9129825 | Field effect transistor including a regrown contoured channel | Anirban Basu, Ali Khakifirooz | 2015-09-08 |
| 9105723 | Multi-height FinFETs with coplanar topography | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2015-08-11 |
| 9064789 | Bonded epitaxial oxide structures for compound semiconductor on silicon substrates | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2015-06-23 |
| 9059132 | Self aligned capacitor fabrication | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2015-06-16 |
| 9041109 | Field effect transistor including a recessed and regrown channel | Anirban Basu, Ali Khakifirooz | 2015-05-26 |
| 9006789 | Compressive strained III-V complementary metal oxide semiconductor (CMOS) device | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2015-04-14 |
| 8975697 | Integrated circuit having MOSFET with embedded stressor and method to fabricate same | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2015-03-10 |
| 8975125 | Formation of bulk SiGe fin with dielectric isolation by anodization | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2015-03-10 |
| 8969934 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2015-03-03 |
| 8956932 | U-shaped semiconductor structure | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2015-02-17 |
| 8946009 | Low extension resistance III-V compound fin field effect transistor | Anirban Basu | 2015-02-03 |
| 8912609 | Low extension resistance III-V compound fin field effect transistor | Anirban Basu | 2014-12-16 |