Issued Patents All Time
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9551696 | Cleanability assessment of sublimate from lithography materials | Mark S. Chace, Martin Glodde, Janine L. Protzman, Qin Yuan | 2017-01-24 |
| 8759220 | Patterning process | Tsutomu Ogihara, Takafumi Ueda, Seiichiro Tachibana, Yoshinori Taneda, Martin Glodde +1 more | 2014-06-24 |
| 8304178 | Top antireflective coating composition containing hydrophobic and acidic groups | Mahmoud Khojasteh, Wu-Song Huang, Kaushal S. Patel, Irene Popova, Pushkara R. Varanasi | 2012-11-06 |
| 8202678 | Wet developable bottom antireflective coating composition and method for use thereof | Kuang-Jung Chen, Mahmoud Khojasteh, Ranee W. Kwong, Wenjie Li, Kaushal S. Patel +1 more | 2012-06-19 |
| 7709187 | High resolution imaging process using an in-situ image modifying layer | Kaushal S. Patel, Wu-Song Huang, Jaione Tirapu Azpiroz | 2010-05-04 |
| 7700262 | Top coat material and use thereof in lithography processes | Wenjie Li, Pushkara R. Varanasi | 2010-04-20 |
| 7608390 | Top antireflective coating composition containing hydrophobic and acidic groups | Mahmoud Khojasteh, Wu-Song Huang, Kaushal S. Patel, Irene Popova, Pushkara R. Varanasi | 2009-10-27 |
| 7563563 | Wet developable bottom antireflective coating composition and method for use thereof | Kuang-Jung Chen, Mahmoud Khojasteh, Ranee W. Kwong, Wenjie Li, Kaushal S. Patel +1 more | 2009-07-21 |
| 7335456 | Top coat material and use thereof in lithography processes | Wenjie Li, Pushkara R. Varanasi | 2008-02-26 |
| 6927015 | Underlayer compositions for multilayer lithographic processes | Mahmoud Khojasteh, Timothy Hughes, Ranee W. Kwong, Pushkara R. Varanasi, William R. Brunsvold +4 more | 2005-08-09 |
| 6818381 | Underlayer compositions for multilayer lithographic processes | Mahmoud Khojasteh, Timothy Hughes, Ranee W. Kwong, Pushkara R. Varanasi, William R. Brunsvold +4 more | 2004-11-16 |
| 6534239 | Resist compositions with polymers having pendant groups containing plural acid labile moieties | Pushkara R. Varanasi, Wenjie Li | 2003-03-18 |
| 6420101 | Method of reducing post-development defects in and around openings formed in photoresist by use of non-patterned exposure | Zhijian Lu, Alan C. Thomas, Alois Gutmann, Kuang-Jung Chen | 2002-07-16 |
| 6372408 | Method of reducing post-development defects in and around openings formed in photoresist by use of multiple development/rinse cycles | Zhijian Lu, Alan C. Thomas, Alois Gutmann, Kuang-Jung Chen | 2002-04-16 |
| 5561194 | Photoresist composition including polyalkylmethacrylate co-polymer of polyhydroxystyrene | Kathleen Cornett, Judy B. Dorn, Leo L. Linehan, Wayne M. Moreau, Randolph J. Smith +1 more | 1996-10-01 |