Issued Patents All Time
Showing 26–50 of 53 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11189724 | Method of forming a top epitaxy source/drain structure for a vertical transistor | Kangguo Cheng, Shogo Mochizuki | 2021-11-30 |
| 11183636 | Techniques for forming RRAM cells | Kangguo Cheng, Juntao Li, Takashi Ando | 2021-11-23 |
| 11177319 | RRAM device with spacer for electrode isolation | Hiroyuki Miyazoe, Iqbal Rashid Saraf, Takashi Ando | 2021-11-16 |
| 11121318 | Tunable forming voltage for RRAM device | Kangguo Cheng, Juntao Li, Zheng Xu | 2021-09-14 |
| 11101322 | RRAM cells in crossbar array architecture | Takashi Ando, Kangguo Cheng, Juntao Li | 2021-08-24 |
| 11101323 | RRAM cells in crossbar array architecture | Takashi Ando, Kangguo Cheng, Juntao Li | 2021-08-24 |
| 11075200 | Integrated device with vertical field-effect transistors and hybrid channels | Zhenxing Bi, Kangguo Cheng, Zheng Xu | 2021-07-27 |
| 11043634 | Confining filament at pillar center for memory devices | Takashi Ando, Kangguo Cheng, Juntao Li | 2021-06-22 |
| 11011704 | Forming RRAM cell structure with filament confinement | Juntao Li, Kangguo Cheng, Takashi Ando | 2021-05-18 |
| 11004751 | Vertical transistor having reduced edge fin variation | Kangguo Cheng, Juntao Li, Zhenxing Bi | 2021-05-11 |
| 10998229 | Transistor with improved self-aligned contact | Kangguo Cheng, Zhenxing Bi, Juntao Li | 2021-05-04 |
| 10971549 | Semiconductor memory device having a vertical active region | Juntao Li, Kangguo Cheng, Takashi Ando | 2021-04-06 |
| 10903421 | Controlling filament formation and location in a resistive random-access memory device | Juntao Li, Takashi Ando, Kangguo Cheng | 2021-01-26 |
| 10886367 | Forming FinFET with reduced variability | Kangguo Cheng, Juntao Li, Zhenxing Bi | 2021-01-05 |
| 10804274 | Co-integration of non-volatile memory on gate-all-around field effect transistor | Zhenxing Bi, Zheng Xu, Kangguo Cheng | 2020-10-13 |
| 10784380 | Gate-all-around transistor based non-volatile memory devices | Zheng Xu, Zhenxing Bi, Qianwen Chen | 2020-09-22 |
| 10763118 | Cyclic selective deposition for tight pitch patterning | Kangguo Cheng, Zhenxing Bi, Juntao Li | 2020-09-01 |
| 10749040 | Integration scheme for non-volatile memory on gate-all-around structure | Zhenxing Bi, Zheng Xu, Kangguo Cheng | 2020-08-18 |
| 10714569 | Producing strained nanosheet field effect transistors using a phase change material | Kangguo Cheng, Juntao Li, Zhenxing Bi | 2020-07-14 |
| 10707127 | Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors | Kangguo Cheng, Juntao Li, Zhenxing Bi | 2020-07-07 |
| 10692203 | Measuring defectivity by equipping model-less scatterometry with cognitive machine learning | Robin Hsin Kuo Chao, Huai Huang | 2020-06-23 |
| 10686014 | Semiconductor memory device having a vertical active region | Juntao Li, Kangguo Cheng, Takashi Ando | 2020-06-16 |
| 10679992 | Integrated device with vertical field-effect transistors and hybrid channels | Zhenxing Bi, Kangguo Cheng, Zheng Xu | 2020-06-09 |
| 10658583 | Forming RRAM cell structure with filament confinement | Juntao Li, Kangguo Cheng, Takashi Ando | 2020-05-19 |
| 10658590 | Techniques for forming RRAM cells | Kangguo Cheng, Juntao Li, Takashi Ando | 2020-05-19 |