Issued Patents All Time
Showing 201–213 of 213 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9263343 | Dual EPI CMOS integration for planar substrates | Nicolas Loubet | 2016-02-16 |
| 9147576 | Gate contact with vertical isolation from source-drain | David V. Horak, Shom Ponoth, Ruilong Xie | 2015-09-29 |
| 9064801 | Bi-layer gate cap for self-aligned contact formation | David V. Horak, Jin-Wook Lee, Daniel T. Pham, Shom Ponoth | 2015-06-23 |
| 9034741 | Halo region formation by epitaxial growth | Thomas N. Adam, Keith E. Fogel, Judson R. Holt, Alexander Reznicek | 2015-05-19 |
| 8999799 | Maskless dual silicide contact formation | Praneet Adusumilli, Emre Alptekin, Kangguo Cheng, Shom Ponoth | 2015-04-07 |
| 8937359 | Contact formation for ultra-scaled devices | Ruilong Xie, Shom Ponoth, David V. Horak | 2015-01-20 |
| 8906754 | Methods of forming a semiconductor device with a protected gate cap layer and the resulting device | Daniel T. Pham, Xiuyu Cai, Pranita Kulkarni | 2014-12-09 |
| 8871582 | Methods of forming a semiconductor device with a protected gate cap layer and the resulting device | Daniel T. Pham, Xiuyu Cai, Pranita Kulkarni | 2014-10-28 |
| 8836041 | Dual EPI CMOS integration for planar substrates | Nicholas Loubet | 2014-09-16 |
| 8753970 | Methods of forming semiconductor devices with self-aligned contacts and the resulting devices | Ruilong Xie, Ponoth Shom, Xiuyu Cai, Robert J. Miller | 2014-06-17 |
| 8586455 | Preventing shorting of adjacent devices | Josephine B. Chang, Michael A. Guillorn, Jeffrey W. Sleight | 2013-11-19 |
| 8039382 | Method for forming self-aligned metal silicide contacts | Sunfei Fang, Randolph F. Knarr, Mahadevaiyer Krishnan, Christian Lavoie, Renee T. Mo +1 more | 2011-10-18 |
| 7618891 | Method for forming self-aligned metal silicide contacts | Sunfei Fang, Randolph F. Knarr, Mahadevaiyer Krishnan, Christian Lavoie, Renee T. Mo +1 more | 2009-11-17 |