Issued Patents All Time
Showing 1,026–1,050 of 1,279 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9443853 | Minimizing shorting between FinFET epitaxial regions | Kangguo Cheng, Balasubramanian Pranatharthiharan, Charan V. Surisetty | 2016-09-13 |
| 9443940 | Defect reduction with rotated double aspect ratio trapping | Keith E. Fogel, Judson R. Holt, Pranita Kerber | 2016-09-13 |
| 9437675 | eDRAM for planar III-V semiconductor devices | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2016-09-06 |
| 9437427 | Controlled confined lateral III-V epitaxy | Karthik Balakrishnan, Lukas Czornomaz, Pouya Hashemi | 2016-09-06 |
| 9437502 | Method to form stacked germanium nanowires and stacked III-V nanowires | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2016-09-06 |
| 9437679 | Semi-conductor device with epitaxial source/drain facetting provided at the gate edge | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2016-09-06 |
| 9437714 | Selective gate contact fill metallization | Praneet Adusumilli, Oscar van der Straten, Chih-Chao Yang | 2016-09-06 |
| 9431265 | Fin cut for tight fin pitch by two different sit hard mask materials on fin | Kangguo Cheng, Ali Khakifirooz, Tenko Yamashita | 2016-08-30 |
| 9425291 | Stacked nanosheets by aspect ratio trapping | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2016-08-23 |
| 9425293 | Stacked nanowires with multi-threshold voltage solution for pFETs | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2016-08-23 |
| 9419078 | Floating body memory with asymmetric channel | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2016-08-16 |
| 9418841 | Type III-V and type IV semiconductor device formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-08-16 |
| 9419074 | Non-planar semiconductor device with aspect ratio trapping | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2016-08-16 |
| 9419138 | Embedded carbon-doped germanium as stressor for germanium nFET devices | Jeffrey L. Dittmar, Keith E. Fogel, Sebastian Naczas, Devendra K. Sadana | 2016-08-16 |
| 9419079 | Low defect relaxed SiGe/strained Si structures on implant anneal buffer/strain relaxed buffer layers with epitaxial rare earth oxide interlayers and methods to fabricate same | — | 2016-08-16 |
| 9412865 | Reduced resistance short-channel InGaAs planar MOSFET | Pranita Kerber, Qiqing C. Ouyang | 2016-08-09 |
| 9406748 | Perfectly shaped controlled nanowires | Karthik Balakrishnan, Kangguo Cheng, Bruce B. Doris, Pouya Hashemi | 2016-08-02 |
| 9406545 | Bulk semiconductor fins with self-aligned shallow trench isolation structures | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2016-08-02 |
| 9406529 | Formation of FinFET junction | Kevin K. Chan, Pouya Hashemi, Ali Khakifirooz, John A. Ott | 2016-08-02 |
| 9406506 | Lattice matched aspect ratio trapping to reduce defects in III-V layer directly grown on silicon | Keith E. Fogel, Pouya Hashemi, Ali Khakifirooz | 2016-08-02 |
| 9401311 | Self aligned structure and method for high-K metal gate work function tuning | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2016-07-26 |
| 9401373 | Multi-fin finFETs with merged-fin source/drains and replacement gates | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz | 2016-07-26 |
| 9391173 | FinFET device with vertical silicide on recessed source/drain epitaxy regions | Keith E. Fogel, Pranita Kerber, Qiqing C. Ouyang | 2016-07-12 |
| 9391077 | SiGe and Si FinFET structures and methods for making the same | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2016-07-12 |
| 9391069 | MIM capacitor with enhanced capacitance formed by selective epitaxy | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Raghavasimhan Sreenivasan | 2016-07-12 |