Issued Patents All Time
Showing 51–75 of 128 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8110901 | Vertical field effect transistor arrays including gate electrodes annularly surrounding semiconductor pillars | Matthew J. Breitwisch, Chung H. Lam | 2012-02-07 |
| 8105859 | In via formed phase change memory cell with recessed pillar heater | Matthew J. Breitwisch, Roger W. Cheek, Eric A. Joseph, Chung H. Lam | 2012-01-31 |
| 8101456 | Method to reduce a via area in a phase change memory cell | Matthew J. Breitwisch, Eric A. Joseph, Chung H. Lam, Yu Zhu | 2012-01-24 |
| 8030130 | Phase change memory device with plated phase change material | Matthew J. Breitwisch, Eric A. Joseph, Xiaoyan Shao | 2011-10-04 |
| 8017432 | Deposition of amorphous phase change material | Chung H. Lam | 2011-09-13 |
| 8017433 | Post deposition method for regrowth of crystalline phase change material | Chung H. Lam, Stephen M. Rossnagel | 2011-09-13 |
| 8012793 | Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide | Chung H. Lam, Gerhard Ingmar Meijer | 2011-09-06 |
| 7989796 | Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement | Chung H. Lam | 2011-08-02 |
| 7981755 | Self aligned ring electrodes | Matthew J. Breitwisch, Eric A. Joseph, Chung H. Lam, Brandon Yee | 2011-07-19 |
| 7981748 | Method for fabricating a vertical field effect transistor array comprising a plurality of semiconductor pillars | Matthew J. Breitwisch, Chung H. Lam | 2011-07-19 |
| 7972966 | Etching of tungsten selective to titanium nitride | Matthew J. Breitwisch, Eric A. Joseph, Chung H. Lam, Brandon Yee | 2011-07-05 |
| 7960203 | Pore phase change material cell fabricated from recessed pillar | Chung H. Lam, Eric A. Joseph, Matthew J. Breitwisch, Roger W. Cheek | 2011-06-14 |
| 7901980 | Self-aligned in-contact phase change memory device | Roger W. Cheek, Chung H. Lam, Stephen M. Rossnagel | 2011-03-08 |
| 7875873 | Phase change materials and associated memory devices | Yi-Chou Chen, Frances Anne Houle, Simone Raoux, Charles Thomas Rettner | 2011-01-25 |
| 7868313 | Phase change memory device and method of manufacture | Matthew J. Breitwisch, Chung H. Lam, Hsiang-Lan Lung, Bipin Rajendran, Yu Zhu | 2011-01-11 |
| 7851323 | Phase change material with filament electrode | Matthew J. Breitwisch, Roger W. Cheek, Eric A. Joseph, Chung H. Lam, Gerhard Ingmar Meijer | 2010-12-14 |
| 7834339 | Programmable-resistance memory cell | Johannes G. Bednorz, Eric A. Joseph, Siegfried F. Karg, Chung H. Lam, Gerhard Ingmar Meijer | 2010-11-16 |
| 7825460 | Vertical field effect transistor arrays and methods for fabrication thereof | Matthew J. Breitwisch, Chung H. Lam | 2010-11-02 |
| 7791057 | Memory cell having a buried phase change region and method for fabricating the same | Hsiang-Lan Lung, Chung H. Lam, Min Yang | 2010-09-07 |
| 7749802 | Process for chemical vapor deposition of materials with via filling capability and structure formed thereby | Fenton R. McFeely, John J. Yurkas | 2010-07-06 |
| 7709325 | Method of forming ring electrode | Eric A. Joseph, Chung H. Lam | 2010-05-04 |
| 7682945 | Phase change element extension embedded in an electrode | Chung H. Lam, Matthew J. Breitwisch, Roger W. Cheek, Matthew D. Moon | 2010-03-23 |
| 7579611 | Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide | Chung H. Lam, Gerhard Ingmar Meijer | 2009-08-25 |
| 7560721 | Phase change material with filament electrode | Matthew J. Breitwisch, Roger W. Cheek, Eric A. Joseph, Chung H. Lam, Gerhard Ingmar Meijer | 2009-07-14 |
| 7525176 | Phase change memory cell design with adjusted seam location | Matthew J. Breitwisch, Thomas Happ | 2009-04-28 |