Issued Patents All Time
Showing 26–50 of 128 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8921820 | Phase change memory cell with large electrode contact area | Matthew J. BrightSky, Chung H. Lam, Jing Li, Norma E. Sosa Cortes | 2014-12-30 |
| 8772906 | Thermally insulated phase change material cells | Matthew J. BrightSky, Roger W. Cheek, Chung H. Lam, Eric A. Joseph, Bipin Rajendran +1 more | 2014-07-08 |
| 8686391 | Pore phase change material cell fabricated from recessed pillar | Chung H. Lam, Eric A. Joseph, Matthew J. Breitwisch, Roger W. Cheek | 2014-04-01 |
| 8680501 | Memory cell with post deposition method for regrowth of crystalline phase change material | Chung H. Lam, Stephen M. Rossnagel | 2014-03-25 |
| 8633464 | In via formed phase change memory cell with recessed pillar heater | Matthew J. Breitwisch, Roger W. Cheek, Eric A. Joseph, Chung H. Lam | 2014-01-21 |
| 8623734 | Method to selectively grow phase change material inside a via hole | Chieh-Fang Chen, Chung H. Lam | 2014-01-07 |
| 8559217 | Phase change material cell with stress inducer liner | Catherine A. Dubourdieu, Martin M. Frank, Bipin Rajendran | 2013-10-15 |
| 8536675 | Thermally insulated phase change material memory cells | Matthew J. Breitwisch, Roger W. Cheek, Eric A. Joseph, Chung H. Lam, Bipin Rajendran +1 more | 2013-09-17 |
| 8471236 | Flat lower bottom electrode for phase change memory cell | Matthew J. Breitwisch, Eric A. Joseph, Chung H. Lam, Hsiang-Lan Lung | 2013-06-25 |
| 8466006 | Thermally insulated phase material cells | Matthew J. Breitwisch, Roger W. Cheek, Eric A. Joseph, Chung H. Lam, Bipin Rajendran +1 more | 2013-06-18 |
| 8445313 | Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process | Matthew J. Breitwisch, Chieh-Fang Chen, Shih-Hung Chen, Eric A. Joseph, Chung H. Lam +3 more | 2013-05-21 |
| 8426967 | Scaled-down phase change memory cell in recessed heater | Eric A. Joseph, Chung H. Lam | 2013-04-23 |
| 8383501 | Vertical field effect transistor arrays and methods for fabrication thereof | Matthew J. Breitwisch, Chung H. Lam | 2013-02-26 |
| 8354659 | Post deposition method for regrowth of crystalline phase change material | Chung H. Lam, Stephen M. Rossnagel | 2013-01-15 |
| 8344351 | Phase change memory device with plated phase change material | Matthew J. Breitwisch, Eric A. Joseph, Xiaoyan Shao | 2013-01-01 |
| 8338225 | Method to reduce a via area in a phase change memory cell | Matthew J. Breitwisch, Eric A. Joseph, Chung H. Lam, Yu Zhu | 2012-12-25 |
| 8330137 | Pore phase change material cell fabricated from recessed pillar | Chung H. Lam, Eric A. Joseph, Matthew J. Breitwisch, Roger W. Cheek | 2012-12-11 |
| 8283650 | Flat lower bottom electrode for phase change memory cell | Matthew J. Breitwisch, Eric A. Joseph, Chung H. Lam, Hsiang-Lan Lung | 2012-10-09 |
| 8273598 | Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process | Matthew J. Breitwisch, Chieh-Fang Chen, Shih-Hung Chen, Eric A. Joseph, Chung H. Lam +3 more | 2012-09-25 |
| 8233317 | Phase change memory device suitable for high temperature operation | Matthew J. Breitwisch, Chung H. Lam, Bipin Rajendran, Simone Raoux, Daniel Krebs | 2012-07-31 |
| 8138056 | Thermally insulated phase change material memory cells with pillar structure | Matthew J. Breitwisch, Roger W. Cheek, Eric A. Joseph, Chung H. Lam, Bipin Rajendran +1 more | 2012-03-20 |
| 8138028 | Method for manufacturing a phase change memory device with pillar bottom electrode | Hsiang-Lan Lung, Chieh-Fang Chen, Yi-Chou Chen, Shih-Hung Chen, Chung H. Lam +5 more | 2012-03-20 |
| 8124950 | Concentric phase change memory element | Thomas Happ | 2012-02-28 |
| 8119528 | Nanoscale electrodes for phase change memory devices | Eric A. Joseph, Mary B. Rothwell, Matthew J. Breitwisch, Chung H. Lam, Bipin Rajendran +1 more | 2012-02-21 |
| 8115186 | Phase change memory cell with reduced switchable volume | Matthew J. Breitwisch, Roger W. Cheek, Eric A. Joseph, Chung H. Lam, Hsiang-Lan Lung | 2012-02-14 |