JS

Jagar Singh

Globalfoundries: 57 patents #34 of 4,424Top 1%
GU Globalfoundries U.S.: 34 patents #14 of 665Top 3%
AR Agency For Science, Technology And Research: 1 patents #909 of 2,337Top 40%
AD Analog Devices: 1 patents #1,102 of 1,943Top 60%
NS National University Of Singapore: 1 patents #498 of 1,623Top 35%
📍 Clifton Park, NY: #11 of 1,126 inventorsTop 1%
🗺 New York: #629 of 115,490 inventorsTop 1%
Overall (All Time): #16,386 of 4,157,543Top 1%
94
Patents All Time

Issued Patents All Time

Showing 51–75 of 94 patents

Patent #TitleCo-InventorsDate
10276700 Symmetrical lateral bipolar junction transistor and use of same in characterizing and protecting transistors Biswanath Senapati 2019-04-30
10236358 Integration of gate structures and spacers with air gaps Suraj K. Patil 2019-03-19
10236367 Bipolar semiconductor device with silicon alloy region in silicon well and method for making Shiv Kumar Mishra 2019-03-19
10164006 LDMOS FinFET structures with trench isolation in the drain extension Jerome Ciavatti, Hui Zang 2018-12-25
10121878 LDMOS finFET structures with multiple gate structures Jerome Ciavatti, Hui Zang 2018-11-06
10115719 Integrated circuits with resistor structures formed from MIM capacitor material and methods for fabricating same Sanford Chu 2018-10-30
10056368 Fin diode with increased junction area Kasun Anupama Punchihewa 2018-08-21
10020386 High-voltage and analog bipolar devices Baofu Zhu 2018-07-10
9966459 Symmetrical lateral bipolar junction transistor and use of same in characterizing and protecting transistors Biswanath Senapati 2018-05-08
9960248 Fin-based RF diodes 2018-05-01
9905668 Bipolar junction transistors and methods of fabrication 2018-02-27
9876010 Resistor disposed directly upon a sac cap of a gate structure of a semiconductor structure Hui Zang, Jerome Ciavatti 2018-01-23
9793262 Fin diode with increased junction area Kasun Anupama Punchihewa 2017-10-17
9780212 Fin width measurement using quantum well structure 2017-10-03
9773781 Resistor and capacitor disposed directly upon a SAC cap of a gate structure of a semiconductor structure Hui Zang, Jerome Ciavatti 2017-09-26
9741713 Parasitic lateral bipolar transistor with improved ideality and leakage currents 2017-08-22
9704966 Fin-based RF diodes 2017-07-11
9666717 Split well zero threshold voltage field effect transistor for integrated circuits Konstantin G. Korablev, Andy Wei 2017-05-30
9647145 Method, apparatus, and system for increasing junction electric field of high current diode Shesh Mani Pandey, Josef S. Watts 2017-05-09
9620587 Three-dimensional electrostatic discharge semiconductor device Andy Wei, Mahadeva Iyer Natarajan 2017-04-11
9614023 Substrate resistor with overlying gate structure 2017-04-04
9601486 ESD snapback based clamp for finFET Andy Wei, Mahadeva Iyer Natarajan, Manjunatha Prabhu, Anil Kumar 2017-03-21
9601428 Semiconductor fuses with nanowire fuse links and fabrication methods thereof Chun Yu Wong, Ashish Baraskar, Min-hwa Chi 2017-03-21
9543378 Semiconductor devices and fabrication methods thereof 2017-01-10
9530553 High performance inductor/transformer and methods of making such inductor/transformer structures Sunil Kumar Singh, Pankaj Marria 2016-12-27