Issued Patents All Time
Showing 126–150 of 173 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7371637 | Oxide-nitride stack gate dielectric | Sundar Narayanan | 2008-05-13 |
| 7365403 | Semiconductor topography including a thin oxide-nitride stack and method for making the same | — | 2008-04-29 |
| 7256087 | Techniques for improving negative bias temperature instability (NBTI) lifetime of field effect transistors | Sharmin Sadoughi, Ravindra M. Kapre, Igor Polishchuk, Maroun Georges Khoury | 2007-08-14 |
| 7256083 | Nitride layer on a gate stack | Alain Blosse | 2007-08-14 |
| 7227212 | Method of forming a floating metal structure in an integrated circuit | Mira Ben-Tzur, James Hunter, Thurman J. Rodgers, Mike Bruner, Klyoko Ikeuchi | 2007-06-05 |
| 7192839 | Semiconductor structure having alignment marks with shallow trench isolation | Sharmin Sadoughi | 2007-03-20 |
| 7192867 | Protection of low-k dielectric in a passivation level | Mira Ben-Tzur, Seurabh Dutta Chowdhury, Michal Efrati Fastow | 2007-03-20 |
| 7189652 | Selective oxidation of gate stack | Alain Blosse, Sundar Narayanan | 2007-03-13 |
| 7094707 | Method of forming nitrided oxide in a hot wall single wafer furnace | Sundar Narayanan | 2006-08-22 |
| 7042054 | SONOS structure including a deuterated oxide-silicon interface and method for making the same | Frederick B. Jenne | 2006-05-09 |
| 7026235 | Dual-damascene process and associated floating metal structures | Mira Ben-Tzur | 2006-04-11 |
| 7018942 | Integrated circuit with improved RC delay | Mira Ben-Tzur, Alain Blosse, Fuad Badrieh | 2006-03-28 |
| 6969689 | Method of manufacturing an oxide-nitride-oxide (ONO) dielectric for SONOS-type devices | Manuj Rathor, Biju Parameshwaran, Loren T. Lancaster | 2005-11-29 |
| 6969684 | Method of making a planarized semiconductor structure | Yitzhak Gilboa, William W. C. Koutny, Jr., Steven Hedayati | 2005-11-29 |
| 6943126 | Deuterium incorporated nitride | Sundar Narayanan | 2005-09-13 |
| 6905893 | Method and structure for determining a concentration profile of an impurity within a semiconductor layer | Sundar Narayanan | 2005-06-14 |
| 6902993 | Gate electrode for MOS transistors | Alain Blosse, Prabhuram Gopalan | 2005-06-07 |
| 6903002 | Low-k dielectric layer with air gaps | Mira Ben-Tzur, Christopher A. Seams, Thurman J. Rodgers | 2005-06-07 |
| 6890859 | Methods of forming semiconductor structures having reduced defects, and articles and devices formed thereby | Hanna Bamnolker, Chan-Lon Yang, Saurabu Dutta Chowdhury | 2005-05-10 |
| 6869850 | Self-aligned contact structure with raised source and drain | Alain Blosse | 2005-03-22 |
| 6841878 | Integrated circuit with improved RC delay | Mira Ben-Tzur, Alain Blosse, Fuad Badrieh | 2005-01-11 |
| 6841491 | In situ deposition of a nitride layer and of an anti-reflective layer | Sharmin Sadoughi | 2005-01-11 |
| 6838392 | Methods of forming semiconductor structures, and articles and devices formed thereby | — | 2005-01-04 |
| 6835616 | Method of forming a floating metal structure in an integrated circuit | Mira Ben-Tzur, James Hunter, Thurman J. Rodgers, Mike Bruner, Klyoko Keuchi | 2004-12-28 |
| 6828201 | Method of manufacturing a top insulating layer for a sonos-type device | — | 2004-12-07 |