Issued Patents All Time
Showing 51–64 of 64 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6703321 | Low thermal budget solution for PMD application using sacvd layer | Fabrice Geiger | 2004-03-09 |
| 6635575 | Methods and apparatus to enhance properties of Si-O-C low K films | Li-Qun Xia, Ellie Yieh, Tian-Hoe Lim | 2003-10-21 |
| 6632478 | Process for forming a low dielectric constant carbon-containing film | Li-Qun Xia, Jen Shu, Ellie Yieh, Tian-Hoe Lim | 2003-10-14 |
| 6627532 | Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition | Li-Qun Xia, Tian-Hoe Lim, Ellie Yieh, Wai-Fan Yau, Shin-Puu Jeng +2 more | 2003-09-30 |
| 6602806 | Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film | Li-Qun Xia, Fabrice Geiger, Ellie Yieh, Tian-Hoe Lim | 2003-08-05 |
| 6583497 | Surface treatment of c-doped SiO2 film to enhance film stability during O2 ashing | Li-Qun Xia, Tian-Hoe Lim, Ellie Yieh | 2003-06-24 |
| 6531398 | Method of depositing organosillicate layers | Li-Qun Xia, Ellie Yieh, Paul Fisher, Srinivas D. Nemani | 2003-03-11 |
| 6528341 | Method of forming a sion antireflection film which is noncontaminating with respect to deep-uv photoresists | Patrick J. Schiavone | 2003-03-04 |
| 6500773 | Method of depositing organosilicate layers | Li-Qun Xia, Ellie Yieh | 2002-12-31 |
| 6486061 | Post-deposition treatment to enhance properties of Si-O-C low K films | Li-Qun Xia, Ellie Yieh, Tian-Hoe Lim | 2002-11-26 |
| 6472333 | Silicon carbide cap layers for low dielectric constant silicon oxide layers | Li-Qun Xia, Paul Fisher, Margaret Gotuaco, Ellie Yieh | 2002-10-29 |
| 6465372 | Surface treatment of C-doped SiO2 film to enhance film stability during O2 ashing | Li-Qun Xia, Tian-Hoe Lim, Ellie Yieh | 2002-10-15 |
| 6413583 | Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound | Farhad Moghadam, David Cheung, Ellie Yieh, Li-Qun Xia, Wai-Fan Yau +4 more | 2002-07-02 |
| 6171973 | Process for etching the gate in MOS technology using a SiON-based hard mask | Patrick J. Schiavone | 2001-01-09 |