Issued Patents All Time
Showing 126–150 of 191 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5366554 | Device for forming a deposited film | Masaaki Hirooka, Jun-Ichi Hanna, Isamu Shimizu | 1994-11-22 |
| 5358987 | Polysilane compositions | Hisami Tanaka, Harumi Sakou, Tatuyuki Aoike, Kouichi Matuda, Keishi Saitou +2 more | 1994-10-25 |
| 5296036 | Apparatus for continuously forming a large area functional deposit film including microwave transmissive member transfer mean | Jinsho Matsuyama | 1994-03-22 |
| 5294285 | Process for the production of functional crystalline film | Shunri Oda, Isamu Shimizu | 1994-03-15 |
| 5266116 | Glow discharge apparatus for continuously manufacturing semiconductor device comprising gas gates with slotted rollers | Yasushi Fujioka, Takashi Kurokawa, Masafumi Sano, Takehito Yoshino, Yuzo Kohda | 1993-11-30 |
| 5244698 | Process for forming deposited film | Shunichi Ishihara, Shigeru Ohno, Shunri Oda, Isamu Shimizu | 1993-09-14 |
| 5220181 | Photovoltaic element of junction type with an organic semiconductor layer formed of a polysilane compound | Hisami Tanaka, Harumi Sakou | 1993-06-15 |
| 5192717 | Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method | Soichiro Kawakami, Takeshi Aoki | 1993-03-09 |
| 5178905 | Process for the formation of a functional deposited film by hydrogen radical-assisted cvd method utilizing hydrogen gas plasma in sheet-like state | Atsushi Yamagami | 1993-01-12 |
| 5178904 | Process for forming deposited film from a group II through group VI metal hydrocarbon compound | Shunichi Ishihara, Shigeru Ohno, Shunri Oda, Isamu Shimizu | 1993-01-12 |
| 5130170 | Microwave PCVD method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation | Jinsho Matsuyama, Katsumi Nakagawa, Toshimitsu Kariya, Yasushi Fujioka, Tetsuya Takei +1 more | 1992-07-14 |
| 5126169 | Process for forming a deposited film from two mutually reactive active species | Shunichi Ishihara, Hisanori Tsuda, Masafumi Sano | 1992-06-30 |
| 5114770 | Method for continuously forming functional deposited films with a large area by a microwave plasma CVD method | Hiroshi Echizen, Yasushi Fujioka, Katsumi Nakagawa, Toshimitsu Kariya, Jinsho Matsuyama +1 more | 1992-05-19 |
| 5038713 | Microwave plasma treating apparatus | Soichiro Kawakami, Takayoshi Arai, Tsutomu Murakami | 1991-08-13 |
| 5028488 | Functional ZnSe.sub.1-x Te.sub.x :H deposited film | Katsumi Nakagawa, Shunichi Ishihara, Tsutomu Murakami, Kozo Arao, Yasushi Fujioka | 1991-07-02 |
| 5024706 | Pin heterojunction photovoltaic elements with polycrystal AlP(H,F) semiconductor film | Tatsuyuki Aoike, Koichi Matsuda, Soichiro Kawakami | 1991-06-18 |
| 5007971 | Pin heterojunction photovoltaic elements with polycrystal BP(H,F) semiconductor film | Tatsuyuki Aoike, Koichi Matsuda, Soichiro Kawakami | 1991-04-16 |
| 5008726 | PIN junction photovoltaic element containing Zn, Se, Te, H in an amount of 1 to 4 atomic % | Katsumi Nakagawa, Shunichi Ishihara, Tsutomu Murakami, Kozo Arao, Yasushi Fujioka +1 more | 1991-04-16 |
| 5006180 | Pin heterojunction photovoltaic elements with polycrystal GaP (H,F) semiconductor film | Tatsuyuki Aoike, Koichi Matsuda, Soichiro Kawakami | 1991-04-09 |
| 5002618 | Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film | Tatsuyuki Aoike, Koichi Matsuda, Soichiro Kawakami | 1991-03-26 |
| 5002617 | Pin heterojunction photovoltaic elements with polycrystal AlAs(H,F) semiconductor film | Tatsuyuki Aoike, Koichi Matsuda, Soichiro Kawakami | 1991-03-26 |
| 4998503 | Apparatus for forming functional deposited film by microwave plasma CVD process | Tsutomu Murakami | 1991-03-12 |
| 4971832 | HR-CVD process for the formation of a functional deposited film on a substrate with application of a voltage in the range of -5 to -100 V | Takayoshi Arai | 1990-11-20 |
| 4959106 | Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic % | Katsumi Nakagawa, Shunichi Ishihara, Kozo Arao, Yasushi Fujioka, Akira Sakai +1 more | 1990-09-25 |
| 4951602 | Microwave plasma chemical vapor deposition apparatus for continuously preparing semiconductor devices | — | 1990-08-28 |