Issued Patents All Time
Showing 151–175 of 191 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 4926229 | Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material | Katsumi Nakagawa, Shunichi Ishihara, Kozo Arao, Yasushi Fujioka, Akira Sakai | 1990-05-15 |
| 4914052 | Process for the formation of a functional deposited film containing groups III and V atoms by microwave plasma chemical vapor deposition process | — | 1990-04-03 |
| 4908330 | Process for the formation of a functional deposited film containing group IV atoms or silicon atoms and group IV atoms by microwave plasma chemical vapor deposition process | Takayoshi Arai, Soichiro Kawakami, Tsutomu Murakami | 1990-03-13 |
| 4908329 | Process for the formation of a functional deposited film containing groups II and VI atoms by microwave plasma chemical vapor deposition process | Tsutomu Murakami, Takayoshi Arai, Soichiro Kawakami | 1990-03-13 |
| 4898118 | Apparatus for forming functional deposited film by microwave plasma CVD process | Tsutomu Murakami | 1990-02-06 |
| 4888062 | Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic % | Katsumi Nakagawa, Shunichi Ishihara, Kozo Arao, Yasushi Fujioka, Akira Sakai +1 more | 1989-12-19 |
| 4869931 | Method for forming deposited films of group II-VI compounds | Masaaki Hirooka, Jun-Ichi Hanna, Isamu Shimizu | 1989-09-26 |
| 4868014 | Method for forming thin film multi-layer structure member | Masaaki Hirooka, Jun-Ichi Hanna, Isamu Shimizu | 1989-09-19 |
| 4853251 | Process for forming deposited film including carbon as a constituent element | Shunichi Ishihara, Shigeru Ohno, Shunri Oda, Isamu Shimizu | 1989-08-01 |
| 4851302 | Functional ZnSe:H deposited films | Katsumi Nakagawa, Shunichi Ishihara, Kozo Arao, Yasushi Fujioka, Akira Sakai | 1989-07-25 |
| 4830890 | Method for forming a deposited film from a gaseous silane compound heated on a substrate and introducing an active species therewith | — | 1989-05-16 |
| 4818563 | Process for forming deposited film | Shunichi Ishihara, Shigeru Ohno, Shunri Oda, Isamu Shimizu | 1989-04-04 |
| 4801468 | Process for forming deposited film | Shunichi Ishihara, Shigeru Ohno, Shunri Oda, Isamu Shimizu | 1989-01-31 |
| 4800173 | Process for preparing Si or Ge epitaxial film using fluorine oxidant | Junichi Hanna, Isamu Shimizu | 1989-01-24 |
| 4784874 | Process for forming deposited film | Shunichi Ishihara, Shigeru Ohno, Shunri Oda, Isamu Shimizu | 1988-11-15 |
| 4778692 | Process for forming deposited film | Shunichi Ishihara, Shigeru Ohno, Shunri Oda, Isamu Shimizu | 1988-10-18 |
| 4772570 | Method for producing an electronic device having a multi-layer structure | Masaaki Hirooka, Jun-Ichi Hanna, Isamu Shimizu | 1988-09-20 |
| 4772486 | Process for forming a deposited film | Shunichi Ishihara, Shigeru Ohno, Shunri Oda, Isamu Shimizu | 1988-09-20 |
| 4771015 | Method for producing an electronic device having a multi-layer structure | Jun-Ichi Hanna, Isamu Shimizu | 1988-09-13 |
| 4728528 | Process for forming deposited film | Shunichi Ishihara, Shigeru Ohno, Shunri Oda, Isamu Shimizu | 1988-03-01 |
| 4726963 | Process for forming deposited film | Shunichi Ishihara, Shigeru Ohno, Shunri Oda, Isamu Shimizu | 1988-02-23 |
| 4720443 | Member having light receiving layer with nonparallel interfaces | Keishi Saitoh, Tetsuo Sueda, Teruo Misumi, Yoshio Tsuezuki, Kyosuke Ogawa | 1988-01-19 |
| 4717586 | Process for forming deposited film | Shunichi Ishihara, Shigeru Ohno, Shunri Oda, Isamu Shimizu | 1988-01-05 |
| 4717585 | Process for forming deposited film | Shunichi Ishihara, Shigeru Ohno, Shunri Oda, Isamu Shimizu | 1988-01-05 |
| 4716048 | Process for forming deposited film | Shunichi Ishihara, Shigeru Ohno, Shunri Oda, Isamu Shimizu | 1987-12-29 |