Issued Patents All Time
Showing 25 most recent of 42 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6752915 | Web conveying apparatus, and apparatus and method for electrodeposition using web conveying apparatus | Noboru Toyama, Yuichi Sonoda, Yusuke Miyamoto | 2004-06-22 |
| 6733650 | Apparatus and process for producing zinc oxide film | Yuichi Sonoda, Noboru Toyama, Yusuke Miyamoto | 2004-05-11 |
| 6632346 | Process for electrodepositing zinc oxide film | Noboru Toyama, Yuichi Sonoda, Yusuke Miyamoto | 2003-10-14 |
| 6592739 | Process and apparatus for forming zinc oxide film, and process and apparatus for producing photovoltaic device | Yuichi Sonoda, Noboru Toyama, Yusuke Miyamoto | 2003-07-15 |
| 6544877 | Method of producing thin film of zinc oxide, process for manufacturing photovoltaic element using its method, and photovoltaic element | Yuichi Sonoda, Noboru Toyama, Yusuke Miyamoto | 2003-04-08 |
| 6475367 | Electrodeposition method | Noboru Toyama, Yuichi Sonoda, Yusuke Miyamoto | 2002-11-05 |
| 6471848 | Electrodeposition method of forming an oxide film | Noboru Toyama, Yuichi Sonoda, Yusuke Miyamoto | 2002-10-29 |
| 6464762 | Aqueous solution for the formation of an indium oxide film by electroless deposition | — | 2002-10-15 |
| 6383359 | Method for forming a zinc oxide layer and method for producing a photovoltaic device | Hideo Tamura, Noboru Toyama, Yuichi Sonoda, Yusuke Miyamoto | 2002-05-07 |
| 6258702 | Method for the formation of a cuprous oxide film and process for the production of a semiconductor device using said method | Katsumi Nakagawa, Yukiko Iwasaki | 2001-07-10 |
| 6238808 | Substrate with zinc oxide layer, method for producing zinc oxide layer, photovoltaic device, and method for producing photovoltaic device | Hideo Tamura, Noboru Toyama, Yuichi Sonoda, Yusuke Miyamoto | 2001-05-29 |
| 6172296 | Photovoltaic cell | Yukiko Iwasaki, Masafumi Sano, Takaharu Kondo | 2001-01-09 |
| 6110347 | Method for the formation of an indium oxide film by electrodeposition process or electroless deposition process, a substrate provided with the indium oxide film for a semiconductor element, and a semiconductor element provided with the substrate | Katsumi Nakagawa, Yukiko Iwasaki | 2000-08-29 |
| 5986204 | Photovoltaic cell | Yukiko Iwasaki, Katsumi Nakagawa | 1999-11-16 |
| 5804466 | Process for production of zinc oxide thin film, and process for production of semiconductor device substrate and process for production of photoelectric conversion device using the same film | Katsumi Nakagawa, Takaharu Kondo, Yukiko Iwasaki | 1998-09-08 |
| 5800632 | Photovoltaic device and method for manufacturing it | Katsumi Nakagawa, Yukiko Iwasaki | 1998-09-01 |
| 5741615 | Light receiving member with non-single-crystal silicon layer containing Cr, Fe, Na, Ni and Mg | Keishi Saitoh, Tatsuyuki Aoike | 1998-04-21 |
| 5244509 | Substrate having an uneven surface for solar cell and a solar cell provided with said substrate | Yasushi Fujioka, Mitsuyuki Niwa, Eiji Takeuchi | 1993-09-14 |
| 5130103 | Method for forming semiconductor crystal and semiconductor crystal article obtained by said method | Kenji Yamagata, Hideya Kumomi, Hiroyuki Tokunaga | 1992-07-14 |
| 5028488 | Functional ZnSe.sub.1-x Te.sub.x :H deposited film | Katsumi Nakagawa, Shunichi Ishihara, Masahiro Kanai, Tsutomu Murakami, Yasushi Fujioka | 1991-07-02 |
| 5008726 | PIN junction photovoltaic element containing Zn, Se, Te, H in an amount of 1 to 4 atomic % | Katsumi Nakagawa, Shunichi Ishihara, Masahiro Kanai, Tsutomu Murakami, Yasushi Fujioka +1 more | 1991-04-16 |
| 4999260 | Magneto-optical recording medium comprising a rare-earth-transition metal dispersed in a dielectric | Ichiro Saito, Yoichi Osato, Eiichi Fujii | 1991-03-12 |
| 4959106 | Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic % | Katsumi Nakagawa, Masahiro Kanai, Shunichi Ishihara, Yasushi Fujioka, Akira Sakai +1 more | 1990-09-25 |
| 4926229 | Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material | Katsumi Nakagawa, Shunichi Ishihara, Masahiro Kanai, Yasushi Fujioka, Akira Sakai | 1990-05-15 |
| 4888062 | Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic % | Katsumi Nakagawa, Masahiro Kanai, Shunichi Ishihara, Yasushi Fujioka, Akira Sakai +1 more | 1989-12-19 |