TA

Tatsuyuki Aoike

Canon: 42 patents #1,000 of 19,416Top 6%
📍 Nagahama, JP: #4 of 132 inventorsTop 4%
Overall (All Time): #74,002 of 4,157,543Top 2%
42
Patents All Time

Issued Patents All Time

Showing 1–25 of 42 patents

Patent #TitleCo-InventorsDate
7550180 Plasma treatment method Toshiyasu Shirasuna, Kazuyoshi Akiyama, Hitoshi Murayama, Takashi Otsuka, Daisuke Tazawa +2 more 2009-06-23
6761128 Plasma treatment apparatus Toshiyasu Shirasuna, Kazuyoshi Akiyama, Hitoshi Murayama, Takashi Otsuka, Daisuke Tazawa +2 more 2004-07-13
6670089 Electrophotographic image forming method and apparatus Toshiyuki Ehara, Junichiro Hashizume, Masaharu Miura 2003-12-30
6649020 Plasma processing apparatus Ryuji Okamura, Toshiyasu Shirasuna, Kazuhiko Takada, Kazuyoshi Akiyama, Hitoshi Murayama 2003-11-18
6486045 Apparatus and method for forming deposited film Takashi Otsuka, Toshiyasu Shirasuna, Kazuyoshi Akiyama, Hitoshi Murayama, Daisuke Tazawa +1 more 2002-11-26
6443191 Vacuum processing methods Hitoshi Murayama, Toshiyasu Shirasuna, Kazuyoshi Akiyama, Takashi Ohtsuka, Daisuke Tazawa +2 more 2002-09-03
6300225 Plasma processing method Ryuji Okamura, Toshiyasu Shirasuna, Kazuhiko Takada, Kazuyoshi Akiyama, Hitoshi Murayama 2001-10-09
6250251 Vacuum processing apparatus and vacuum processing method Kazuyoshi Akiyama, Toshiyasu Shirasuna, Hitoshi Murayama, Takashi Otsuka, Daisuke Tazawa +1 more 2001-06-26
6165274 Plasma processing apparatus and method Kazuyoshi Akiyama, Toshiyasu Shirasuna, Kazuhiko Takada, Ryuji Okamura, Hitoshi Murayama 2000-12-26
5961726 Deposited film forming apparatus and electrode for use in it 1999-10-05
5741615 Light receiving member with non-single-crystal silicon layer containing Cr, Fe, Na, Ni and Mg Keishi Saitoh, Kozo Arao 1998-04-21
5604133 Method of making photovoltaic device 1997-02-18
5573601 Pin amorphous silicon photovoltaic element with counter-doped intermediate layer Keishi Saitoh, Yasushi Fujioka, Masafumi Sano, Mitsuyuki Niwa 1996-11-12
5563425 Photoelectrical conversion device and generating system using the same Keishi Saito, Masafumi Sano, Mitsuyuki Niwa, Ryo Hayashi, Masahiko Tonogaki 1996-10-08
5563075 Forming a non-monocrystalline silicone semiconductor having pin junction including laminated intrinsic layers Keishi Saito, Masafumi Sano, Mitsuyuki Niwa, Ryo Hayashi, Masahiko Tonogaki 1996-10-08
5527396 Deposited film forming apparatus Keishi Saitoh, Masafumi Sano, Mitsuyuki Niwa, Jinsho Matsuyama, Toshimitsu Kariya +3 more 1996-06-18
5510631 Non-monocrystalline silicon carbide semiconductor and semiconductor device employing the same Keishi Saito, Toshimitsu Kariya, Yuzo Koda 1996-04-23
5429685 Photoelectric conversion element and power generation system using the same Keishi Saito, Masafumi Sano, Mitsuyuki Niwa, Ryo Hayashi, Masahiko Tonogaki 1995-07-04
5417770 Photovoltaic device and a forming method thereof Keishi Saitoh, Masafumi Sano, Mitsuyuki Niwa, Jinsho Matsuyama, Toshimitsu Kariya +3 more 1995-05-23
5418680 Apparatus for repairing an electrically short-circuited semiconductor device Keishi Saito, Mitsuyuki Niwa, Toshimitsu Kariya, Yuzo Koda 1995-05-23
5371380 Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1.times.10.sup.(19) (cm.sup.-3) or less Keishi Saito, Mitsuyuki Niwa, Toshimitsu Kariya, Yuzo Koda 1994-12-06
5362684 Non-monocrystalline silicon carbide semiconductor, process of production thereof, and semiconductor device employing the same Keishi Saito, Toshimitsu Kariya, Yuzo Koda 1994-11-08
5358811 Electrophotographic method using an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and insulating toner having a volume average particle size of 4.5 to 9.0 micron Koji Yamazaki, Toshimitsu Kariya, Toshiyuki Ehara, Takehito Yoshino, Hirokazu Otoshi 1994-10-25
5342452 Photovoltaic device Keishi Saito 1994-08-30
5338370 Photovoltaic device 1994-08-16