Issued Patents All Time
Showing 26–42 of 42 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5284525 | Solar cell | Keishi Saito, Yasushi Fujioka, Mitsuyuki Niwa, Toshimitsu Kariya, Yuzo Kohda | 1994-02-08 |
| 5281541 | Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method | Keishi Saito, Mitsuyuki Niwa, Toshimitsu Kariya, Yuzo Koda | 1994-01-25 |
| 5236798 | Electrophotographic light receiving member having a photoconductive layer formed of non-single crystal silicon material and a surface layer containing polysilane compound | Koichi Matsuda, Keishi Saitoh, Mitsuyuki Niwa, Masafumi Sano, Hisami Tanaka | 1993-08-17 |
| 5087542 | Electrophotographic image-forming method wherein an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and fine particle insulating toner are used | Koji Yamazaki, Toshimitsu Kariya, Toshiyuki Ehara, Takehito Yoshino, Hirokazu Otoshi | 1992-02-11 |
| 5024706 | Pin heterojunction photovoltaic elements with polycrystal AlP(H,F) semiconductor film | Masahiro Kanai, Koichi Matsuda, Soichiro Kawakami | 1991-06-18 |
| 5007971 | Pin heterojunction photovoltaic elements with polycrystal BP(H,F) semiconductor film | Masahiro Kanai, Koichi Matsuda, Soichiro Kawakami | 1991-04-16 |
| 5006180 | Pin heterojunction photovoltaic elements with polycrystal GaP (H,F) semiconductor film | Masahiro Kanai, Koichi Matsuda, Soichiro Kawakami | 1991-04-09 |
| 5002618 | Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film | Masahiro Kanai, Koichi Matsuda, Soichiro Kawakami | 1991-03-26 |
| 5002617 | Pin heterojunction photovoltaic elements with polycrystal AlAs(H,F) semiconductor film | Masahiro Kanai, Koichi Matsuda, Soichiro Kawakami | 1991-03-26 |
| 4981766 | Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of a non-single-crystal silicon material | Masafumi Sano, Takehito Yoshino, Toshimitsu Kariya, Hiroaki Niino | 1991-01-01 |
| 4954397 | Light receiving member having a divided-functionally structured light receiving layer having CGL and CTL for use in electrophotography | Hiroshi Amada, Takehito Yoshino, Ryuji Okamura | 1990-09-04 |
| 4906542 | Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material | Masafumi Sano, Takehito Yoshino, Toshimitsu Kariya, Hiroaki Niino | 1990-03-06 |
| 4906543 | Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material | Masafumi Sano, Takehito Yoshino, Toshimitsu Kariya, Hiroaki Niino | 1990-03-06 |
| 4886723 | Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material | Masafumi Sano, Takehito Yoshino, Toshimitsu Kariya, Hiroaki Niino | 1989-12-12 |
| 4882251 | Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material | Masafumi Sano, Takehito Yoshino, Toshimitsu Kariya, Hiroaki Niino | 1989-11-21 |
| 4845001 | Light receiving member for use in electrophotography with a surface layer comprising non-single-crystal material containing tetrahedrally bonded boron nitride | Tetsuya Takei, Keishi Saito, Yasushi Fujioka | 1989-07-04 |
| 4795691 | Layered amorphous silicon photoconductor with surface layer having specific refractive index properties | Tetsuya Takei, Minoru Kato, Keishi Saito | 1989-01-03 |