TA

Tatsuyuki Aoike

Canon: 42 patents #1,000 of 19,416Top 6%
📍 Nagahama, JP: #4 of 132 inventorsTop 4%
Overall (All Time): #74,002 of 4,157,543Top 2%
42
Patents All Time

Issued Patents All Time

Showing 26–42 of 42 patents

Patent #TitleCo-InventorsDate
5284525 Solar cell Keishi Saito, Yasushi Fujioka, Mitsuyuki Niwa, Toshimitsu Kariya, Yuzo Kohda 1994-02-08
5281541 Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method Keishi Saito, Mitsuyuki Niwa, Toshimitsu Kariya, Yuzo Koda 1994-01-25
5236798 Electrophotographic light receiving member having a photoconductive layer formed of non-single crystal silicon material and a surface layer containing polysilane compound Koichi Matsuda, Keishi Saitoh, Mitsuyuki Niwa, Masafumi Sano, Hisami Tanaka 1993-08-17
5087542 Electrophotographic image-forming method wherein an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and fine particle insulating toner are used Koji Yamazaki, Toshimitsu Kariya, Toshiyuki Ehara, Takehito Yoshino, Hirokazu Otoshi 1992-02-11
5024706 Pin heterojunction photovoltaic elements with polycrystal AlP(H,F) semiconductor film Masahiro Kanai, Koichi Matsuda, Soichiro Kawakami 1991-06-18
5007971 Pin heterojunction photovoltaic elements with polycrystal BP(H,F) semiconductor film Masahiro Kanai, Koichi Matsuda, Soichiro Kawakami 1991-04-16
5006180 Pin heterojunction photovoltaic elements with polycrystal GaP (H,F) semiconductor film Masahiro Kanai, Koichi Matsuda, Soichiro Kawakami 1991-04-09
5002618 Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film Masahiro Kanai, Koichi Matsuda, Soichiro Kawakami 1991-03-26
5002617 Pin heterojunction photovoltaic elements with polycrystal AlAs(H,F) semiconductor film Masahiro Kanai, Koichi Matsuda, Soichiro Kawakami 1991-03-26
4981766 Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of a non-single-crystal silicon material Masafumi Sano, Takehito Yoshino, Toshimitsu Kariya, Hiroaki Niino 1991-01-01
4954397 Light receiving member having a divided-functionally structured light receiving layer having CGL and CTL for use in electrophotography Hiroshi Amada, Takehito Yoshino, Ryuji Okamura 1990-09-04
4906542 Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material Masafumi Sano, Takehito Yoshino, Toshimitsu Kariya, Hiroaki Niino 1990-03-06
4906543 Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material Masafumi Sano, Takehito Yoshino, Toshimitsu Kariya, Hiroaki Niino 1990-03-06
4886723 Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material Masafumi Sano, Takehito Yoshino, Toshimitsu Kariya, Hiroaki Niino 1989-12-12
4882251 Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material Masafumi Sano, Takehito Yoshino, Toshimitsu Kariya, Hiroaki Niino 1989-11-21
4845001 Light receiving member for use in electrophotography with a surface layer comprising non-single-crystal material containing tetrahedrally bonded boron nitride Tetsuya Takei, Keishi Saito, Yasushi Fujioka 1989-07-04
4795691 Layered amorphous silicon photoconductor with surface layer having specific refractive index properties Tetsuya Takei, Minoru Kato, Keishi Saito 1989-01-03