Issued Patents All Time
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12041801 | Liquid organic semiconductor material | Keiji Tokunaga, Hiroaki Iino | 2024-07-16 |
| 9490433 | Benzothienobenzothiophene derivative, organic semiconductor material, and organic transistor | Atsuhisa Miyawaki, Tetsuo Kusumoto, Yoshio Aoki, Aya Ishizuka, Yoshinobu Sakurai +1 more | 2016-11-08 |
| 7847284 | Organic semiconductor material, organic semiconductor structure, and organic semiconductor device | Teppei Shimakawa, Masanori Akada, Hiroki Maeda | 2010-12-07 |
| 7638795 | Organic semiconductor structure, process for producing the same, and organic semiconductor device | Hiroki Maeda, Masanori Akada | 2009-12-29 |
| 7365359 | Organic semiconductor material and organic semiconductor element | Shinobu Sakurada, Ken Tomino, Hiroki Maeda, Masanori Akada | 2008-04-29 |
| 7259390 | Organic semiconductor material | Hiroaki Iino, Hiroki Maeda | 2007-08-21 |
| 7102154 | Organic semiconductor structure, process for producing the same, and organic semiconductor device | Hiroki Maeda, Masanori Akada | 2006-09-05 |
| 5879970 | Process of growing polycrystalline silicon-germanium alloy having large silicon content | Kunihiko Shiota | 1999-03-09 |
| 5795396 | Apparatus for forming crystalline film | Shunichi Ishihara | 1998-08-18 |
| 5718761 | Method of forming crystalline compound semiconductor film | Hiroyuki Tokunaga, Isamu Shimizu | 1998-02-17 |
| 5624720 | Process for forming a deposited film by reacting between a gaseous starting material and an oxidizing agent | Yoshiyuki Osada | 1997-04-29 |
| 5482557 | Device for forming deposited film | Masahiro Kanai, Masaaki Hirooka, Isamu Shimizu, Keishi Saitoh | 1996-01-09 |
| 5366554 | Device for forming a deposited film | Masahiro Kanai, Masaaki Hirooka, Isamu Shimizu | 1994-11-22 |
| 5322568 | Apparatus for forming deposited film | Shunichi Ishihara, Isamu Shimizu, Masaaki Hirooka | 1994-06-21 |
| 5213997 | Method for forming crystalline film employing localized heating of the substrate | Shunichi Ishihara | 1993-05-25 |
| 5160543 | Device for forming a deposited film | Shunichi Ishihara, Masaaki Hirooka, Isamu Shimizu | 1992-11-03 |
| 4869931 | Method for forming deposited films of group II-VI compounds | Masaaki Hirooka, Masahiro Kanai, Isamu Shimizu | 1989-09-26 |
| 4868014 | Method for forming thin film multi-layer structure member | Masahiro Kanai, Masaaki Hirooka, Isamu Shimizu | 1989-09-19 |
| 4865883 | Method for forming a deposited film containing IN or SN | Keishi Saitoh, Masaaki Hirooka, Isamu Shimizu | 1989-09-12 |
| 4844950 | Method for forming a metal film on a substrate | Keishi Saitoh, Masaaki Hirooka, Isamu Shimizu | 1989-07-04 |
| 4842897 | Method for forming deposited film | Eiji Takeuchi, Isamu Shimizu, Masaaki Hirooka, Akira Sakai, Masao Ueki | 1989-06-27 |
| 4837048 | Method for forming a deposited film | Shunichi Ishihara, Isamu Shimizu | 1989-06-06 |
| 4834023 | Apparatus for forming deposited film | Keishi Saitoh, Masaaki Hirooka, Isamu Shimizu | 1989-05-30 |
| 4818560 | Method for preparation of multi-layer structure film | Shunichi Ishihara, Isamu Shimizu | 1989-04-04 |
| 4812331 | Method for forming deposited film containing group III or V element by generating precursors with halogenic oxidizing agent | Masaaki Hirooka, Masao Ueki, Isamu Shimizu | 1989-03-14 |