Issued Patents All Time
Showing 26–37 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9923081 | Selective process for source and drain formation | Xinyu BAO, Zhiyuan Ye, Flora Fong-Song CHANG, Abhishek Dube, Errol Antonio C. Sanchez +2 more | 2018-03-20 |
| 9890455 | Pre-heat ring designs to increase deposition uniformity and substrate throughput | Nyi O. Myo, John S. Webb, Masato Ishii, Zhiyuan Ye, Ali Zojaji | 2018-02-13 |
| 9881790 | Method to enhance growth rate for selective epitaxial growth | Abhishek Dube, Yi-Chiau Huang, Hua Chung, Schubert S. Chu | 2018-01-30 |
| 9805942 | Method of modifying epitaxial growth shape on source drain area of transistor | Yihwan Kim, Abhishek Dube | 2017-10-31 |
| 9704708 | Halogenated dopant precursors for epitaxy | Abhishek Dube, Yihwan Kim | 2017-07-11 |
| 9530638 | Method to grow thin epitaxial films at low temperature | Abhishek Dube, Hua Chung, Jenn-Yue Wang, Yi-Chiau Huang, Schubert S. Chu | 2016-12-27 |
| 9530661 | Method of modifying epitaxial growth shape on source drain area of transistor | Yihwan Kim, Abhishek Dube | 2016-12-27 |
| 9532401 | Susceptor support shaft with uniformity tuning lenses for EPI process | Zhepeng CONG, Balasubramanian Ramachandran, Masato Ishii, Mehmet Tugrul Samir, Shu-Kwan LAU +1 more | 2016-12-27 |
| 9460918 | Epitaxy of high tensile silicon alloy for tensile strain applications | Zhiyuan Ye, Saurabh Chopra, Yihwan Kim | 2016-10-04 |
| 9012328 | Carbon addition for low resistivity in situ doped silicon epitaxy | Zhiyuan Ye, Saurabh Chopra, Yihwan Kim | 2015-04-21 |
| 8652945 | Epitaxy of high tensile silicon alloy for tensile strain applications | Zhiyuan Ye, Saurabh Chopra, Yihwan Kim | 2014-02-18 |
| 8460764 | Method and apparatus for producing ultra-thin graphitic layers | Walt A. de Heer, Michael Sprinkle | 2013-06-11 |