Issued Patents All Time
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9070633 | Method and apparatus for high efficiency gas dissociation in inductive coupled plasma reactor | Roy C. Nangoy, Saravjeet Singh, Jon C. Farr, Ajay Kumar | 2015-06-30 |
| 9039908 | Post etch reactive plasma milling to smooth through substrate via sidewalls and other deeply etched features | Jon C. Farr, Khalid Mohiuddin Sirajuddin | 2015-05-26 |
| 8753474 | Method and apparatus for high efficiency gas dissociation in inductive couple plasma reactor | Roy C. Nangoy, Saravjeet Singh, Jon C. Farr, Ajay Kumar | 2014-06-17 |
| 8475625 | Apparatus for etching high aspect ratio features | Huutri Dao, Xiaoping Zhou, Kelly A. McDonough, Jivko Dinev, Farid Abooameri +9 more | 2013-07-02 |
| 8158522 | Method of forming a deep trench in a substrate | Khalid Mohiuddin Sirajuddin, Digvijay A. Raorane, Jon C. Farr | 2012-04-17 |
| 6979652 | Etching multi-shaped openings in silicon | Anisul Khan, Sanjay Thekdi, Ajay Kumar | 2005-12-27 |
| 6905616 | Method of releasing devices from a substrate | Ajay Kumar, Anisul Khan, Sanjay Thekdi | 2005-06-14 |
| 6897155 | Method for etching high-aspect-ratio features | Ajay Kumar, Anisul Khan, Dragan Podlesnik, Axel Henke, Stephan Wege +1 more | 2005-05-24 |
| 6593244 | Process for etching conductors at high etch rates | Yiqiong Wang, Anisul Khan, Ajay Kumar, Dragan Podlesnik | 2003-07-15 |