Yuesong He — 15 Patents at AMD

Yuesong He has been granted 15 US patents while listed as an inventor at AMD. The first was granted in 1999 and the most recent in February 2019. Yuesong He ranks #307,048 of 4,157,543 US inventors in our database (top 7.4%). Patent records list Yuesong He in Beijing, CA, CN.

Patents per Year

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Showing 1–15 of 15 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
10218767	Method, system and browser for executing active object of browser	Jinwei Li, Zhi Chen, Yu Fu, Ming-Chung Li, Huan Ren	2019-02-26
9513937	Method and client for using an embedded ActiveX plug-in in a browser	Zhi Chen, Jinwei Li, Yu Fu, Huan Ren	2016-12-06
6812521	Method and apparatus for improved performance of flash memory cell devices	Kent Kuohua Chang, R. Lee Tan	2004-11-02	$2,431,000
6355522	Effect of doped amorphous Si thickness on better poly 1 contact resistance performance for nand type flash memory devices	Kent Kuohua Chang, John Jianshi Wang	2002-03-12	$4,949,000
6281078	Manufacturing process to eliminate ONO fence material in high density NAND-type flash memory devices	Kent Kuohua Chang, John Jianshi Wang, Ken D. Au	2001-08-28	$6,206,000
6204159	Method of forming select gate to improve reliability and performance for NAND type flash memory devices	Kent Kuohua Chang, Kenneth Wo-Wai Au	2001-03-20	$7,513,000
6184084	Method to elimate silicide cracking for nand type flash memory devices by implanting a polish rate improver into the second polysilicon layer and polishing it	David Chi, Kent Kuohua Chang	2001-02-06	$6,888,000
6177312	Method for removing contaminate nitrogen from the peripheral gate region of a non-volatile memory device during production of such device	John Jianshi Wang, Toru Ishigaki, Kent Kuohua Chang, Effiong Ibok	2001-01-23	$6,489,000
6146795	Method for manufacturing memory devices	Jiahua Huang, Kent Kuohua Chang	2000-11-14	$4,365,000
6114230	Nitrogen ion implanted amorphous silicon to produce oxidation resistant and finer grain polysilicon based floating gates	Kent Kuohua Chang, David Chi	2000-09-05	$8,144,000
6066873	Method and apparatus for preventing P1 punchthrough	John Jianshi Wang, Kent Kuohua Chang	2000-05-23	$12,811,000
6063668	Poly I spacer manufacturing process to eliminate polystringers in high density nand-type flash memory devices	Kent Kuohua Chang, John Jianshi Wang	2000-05-16	$14,024,000
6017786	Method for forming a low barrier height oxide layer on a silicon substrate	John Jianshi Wang, Dae Yeong Joh	2000-01-25	$8,114,000
5981339	Narrower erase distribution for flash memory by smaller poly grain size	Kent Kuohua Chang, David Chi	1999-11-09	$2,369,000
5972749	Method for preventing P1 punchthrough	John Jianshi Wang, Kent Kuohua Chang	1999-10-26	$1,975,000

Yuesong He — 15 Patents

Patents per Year

Issued Patents All Time

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