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Home › Effect of doped amorphous Si thickness on better poly 1 contact resistance performance for nand type flash memory devices

Effect of doped amorphous Si thickness on better poly 1 contact resistance performance for nand type flash memory devices

US Patent 6355522 · Granted Mar 12, 2002

Estimated economic value: $4,949,000 ⓘ

Assignee

AMD

Inventors

Kent Kuohua Chang (82 patents)
John Jianshi Wang (46 patents)
Yuesong He (15 patents)

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