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Home › Nitrogen ion implanted amorphous silicon to produce oxidation resistant and finer grain polysilicon based floating gates

Nitrogen ion implanted amorphous silicon to produce oxidation resistant and finer grain polysilicon based floating gates

US Patent 6114230 · Granted Sep 5, 2000

Estimated economic value: $8,144,000 ⓘ

Assignee

AMD

Inventors

Kent Kuohua Chang (82 patents)
Yuesong He (15 patents)
David Chi (31 patents)

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