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Home › Poly I spacer manufacturing process to eliminate polystringers in high density nand-type flash memory devices

Poly I spacer manufacturing process to eliminate polystringers in high density nand-type flash memory devices

US Patent 6063668 · Granted May 16, 2000

Estimated economic value: $14,024,000 ⓘ

Assignee

AMD

Inventors

Yuesong He (15 patents)
Kent Kuohua Chang (82 patents)
John Jianshi Wang (46 patents)

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