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Home › Method to elimate silicide cracking for nand type flash memory devices by implanting a polish rate improver into the second polysilicon layer and polishing it

Method to elimate silicide cracking for nand type flash memory devices by implanting a polish rate improver into the second polysilicon layer and polishing it

US Patent 6184084 · Granted Feb 6, 2001

Estimated economic value: $6,888,000 ⓘ

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