{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Method of forming select gate to improve reliability and performance for NAND type flash memory devices", "item": "https://www.patentleaderboard.com/patent/6204159"}]}

Home › Method of forming select gate to improve reliability and performance for NAND type flash memory devices

Method of forming select gate to improve reliability and performance for NAND type flash memory devices

US Patent 6204159 · Granted Mar 20, 2001

Estimated economic value: $7,513,000 ⓘ

Assignee

AMD

Inventors

Kent Kuohua Chang (82 patents)
Kenneth Wo-Wai Au (14 patents)
Yuesong He (15 patents)

View full patent text on Google Patents →