Issued Patents All Time
Showing 26–45 of 45 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6172915 | Unified erase method in flash EEPROM | James Yu, Jeffrey W. Anthony | 2001-01-09 |
| 6023426 | Method of achieving narrow V.sub.T distribution after erase in flash EEPROM | James Yu, Chien-Sheng Su | 2000-02-08 |
| 5966330 | Method and apparatus for measuring the threshold voltage of flash EEPROM memory cells being applied a variable control gate bias | Chien-Sheng Su | 1999-10-12 |
| 5920506 | Method and apparatus for bulk preprogramming flash memory cells with minimal source and drain currents | Hsingya Arthur Wang, Haike Dong, Jein-Chen Young, Aaron Yip, Kenneth Miu | 1999-07-06 |
| 5882985 | Reduction of field oxide step height during semiconductor fabrication | Hsingya Arthur Wang, Ming Sang Kwan | 1999-03-16 |
| 5869385 | Selectively oxidized field oxide region | Mark T. Ramsbey | 1999-02-09 |
| 5854108 | Method and system for providing a double diffuse implant junction in a flash device | James Hsu, Jian Chen | 1998-12-29 |
| 5852582 | Non-volatile storage device refresh time detector | Lee Cleveland, Jonathan S. Su, Chi Chang, Chung K. Chang | 1998-12-22 |
| 5831901 | Method of programming a memory cell to contain multiple values | Qimeng Zhou, Hsingya Arthur Wang | 1998-11-03 |
| 5805502 | System for constant field erasure in a FLASH EPROM | Chi Chang, James Yu | 1998-09-08 |
| 5652447 | Flash EEPROM memory with reduced column leakage current | Jian Chen, Scott Luning, Salvatore F. Cagnina | 1997-07-29 |
| 5650964 | Method of inhibiting degradation of ultra short channel charge-carrying devices during discharge | Jian Chen, James Hsu, Shengwen Luan, David Kuan-Yu Liu, Michael A. Van Buskirk | 1997-07-22 |
| 5642311 | Overerase correction for flash memory which limits overerase and prevents erase verify errors | Lee Cleveland, Chung K. Chang, Nancy Leong, Michael Fliesler, Tiao-Hua Kuo | 1997-06-24 |
| 5629893 | System for constant field erasure in a flash EPROM | Chi Chang, James Yu | 1997-05-13 |
| 5629892 | Flash EEPROM memory with separate reference array | — | 1997-05-13 |
| 5608672 | Correction method leading to a uniform threshold voltage distribution for a flash eprom | Jian Chen, Chung K. Chang | 1997-03-04 |
| 5596531 | Method for decreasing the discharge time of a flash EPROM cell | David Kuan-Yu Liu, Ming Sang Kwan, Chi Chang, Sameer Haddad | 1997-01-21 |
| 5485423 | Method for eliminating of cycling-induced electron trapping in the tunneling oxide of 5 volt only flash EEPROMS | Chi Chang, Michael A. Van Buskirk, Chung K. Chang | 1996-01-16 |
| 5482881 | Method of making flash EEPROM memory with reduced column leakage current | Jian Chen, Scott Luning, Salvatore F. Cagnina | 1996-01-09 |
| 5481494 | Method for tightening VT distribution of 5 volt-only flash EEPROMS | Lee Cleveland | 1996-01-02 |