Issued Patents All Time
Showing 26–36 of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7879709 | Semiconductor structure comprising an electrically conductive feature and method of forming a semiconductor structure | Frank Feustel, Tobias Letz | 2011-02-01 |
| 7875514 | Technique for compensating for a difference in deposition behavior in an interlayer dielectric material | Ralf Richter, Robert Seidel | 2011-01-25 |
| 7785956 | Technique for compensating for a difference in deposition behavior in an interlayer dielectric material | Ralf Richter, Robert Seidel | 2010-08-31 |
| 7767593 | Semiconductor device including field effect transistors laterally enclosed by interlayer dielectric material having increased intrinsic stress | Ralf Richter, Juergen Boemmels | 2010-08-03 |
| 7764078 | Test structure for monitoring leakage currents in a metallization layer | Frank Feustel, Thomas Werner | 2010-07-27 |
| 7678690 | Semiconductor device comprising a contact structure with increased etch selectivity | Ralf Richter, Heike Salz, Matthias Schaller | 2010-03-16 |
| 7638424 | Technique for non-destructive metal delamination monitoring in semiconductor devices | Ralf Richter, Holger Schuehrer | 2009-12-29 |
| 7608501 | Technique for creating different mechanical strain by forming a contact etch stop layer stack having differently modified intrinsic stress | Kai Frohberg, Matthias Schaller, Heike Salz | 2009-10-27 |
| 7592258 | Metallization layer of a semiconductor device having differently thick metal lines and a method of forming the same | Matthias Lehr, Matthias Schaller | 2009-09-22 |
| 7482219 | Technique for creating different mechanical strain by a contact etch stop layer stack with an intermediate etch stop layer | Kai Frohberg, Matthias Schaller, Heike Salz | 2009-01-27 |
| 7416973 | Method of increasing the etch selectivity in a contact structure of semiconductor devices | Heike Salz, Ralf Richter, Matthias Schaller | 2008-08-26 |