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Metal-to-metal antifuse having improved barrier layer |
Rajiv Jain, Mehul D. Shroff |
2003-09-30 |
| 6274419 |
Trench isolation of field effect transistors |
Farrokh Omid-Zohoor, Yowjuang W. Liu, Craig S. Sander |
2001-08-14 |
| 6232221 |
Borderless vias |
Khanh Tran, Sunil Mehta |
2001-05-15 |
| 6154054 |
Programmable device having antifuses without programmable material edges and/or corners underneath metal |
Mehul D. Shroff, Rajiv Jain, Kathryn E. Gordon |
2000-11-28 |
| 6127845 |
Field programmable gate array having internal logic transistors with two different gate insulator thicknesses |
Paige A. Kolze, David D. Eaton |
2000-10-03 |
| 6107165 |
Metal-to-metal antifuse having improved barrier layer |
Rajiv Jain, Mehul D. Shroff |
2000-08-22 |
| 6097090 |
High integrity vias |
Khanh Tran, Sunil Mehta |
2000-08-01 |
| 5955751 |
Programmable device having antifuses without programmable material edges and/or corners underneath metal |
Mehul D. Shroff, Rajiv Jain, Kathryn E. Gordon |
1999-09-21 |
| 5939766 |
High quality capacitor for sub-micrometer integrated circuits |
David C. Greenlaw |
1999-08-17 |
| 5925932 |
Borderless vias |
Khanh Tran, Sunil Mehta |
1999-07-20 |
| 5877066 |
Narrow width trenches for field isolation in integrated circuits |
Farrokh Omid-Zohoor |
1999-03-02 |
| 5874317 |
Trench isolation for integrated circuits |
— |
1999-02-23 |
| 5834159 |
Image reversal technique for forming small structures in integrated circuits |
— |
1998-11-10 |
| 5834845 |
Interconnect scheme for integrated circuits |
— |
1998-11-10 |
| 5777370 |
Trench isolation of field effect transistors |
Farrokh Omid-Zohoor, Yowjuang W. Liu, Craig S. Sander |
1998-07-07 |
| 5742090 |
Narrow width trenches for field isolation in integrated circuits |
Farrokh Omid-Zohoor |
1998-04-21 |
| 5654915 |
6-bulk transistor static memory cell using split wordline architecture |
Christopher J. Petti |
1997-08-05 |
| 5523258 |
Method for avoiding lithographic rounding effects for semiconductor fabrication |
Christopher J. Petti, Mark A. Helm |
1996-06-04 |
| 5384279 |
Method of manufacturing a semiconductor device comprising a silicon body in which semiconductor regions are formed by ion implantations |
Paulus M. T. M. Van Attekum, Hubertus Den Blanken, Paulus A. Van Der Plas, Reinier De Werdt |
1995-01-24 |
| 5081065 |
Method of contacting silicide tracks |
Alexander G. M. Jonkers, Christopher A. Seams, Harald Godon |
1992-01-14 |
